Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPU95R2K0P7AKMA1

IPU95R2K0P7AKMA1

MOSFET N-CH 950V 4A TO251-3

Infineon Technologies
6,000 -

RFQ

IPU95R2K0P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 2Ohm @ 1.7A, 10V 3.5V @ 80µA 10 nC @ 10 V ±20V 330 pF @ 400 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPU02N60C3BKMA1

SPU02N60C3BKMA1

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies
3,563 -

RFQ

SPU02N60C3BKMA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA70R450P7SXKSA1

IPA70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies
3,926 -

RFQ

IPA70R450P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 400 V ±16V 424 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF60DM206

IRF60DM206

MOSFET N-CH 60V 130A DIRECTFET

Infineon Technologies
2,023 -

RFQ

IRF60DM206

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.7V @ 150µA 200 nC @ 10 V ±20V 6530 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6715MTRPBF

IRF6715MTRPBF

MOSFET N-CH 25V 34A DIRECTFET

Infineon Technologies
3,148 -

RFQ

IRF6715MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 34A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 34A, 10V 2.4V @ 100µA 59 nC @ 4.5 V ±20V 5340 pF @ 13 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6716MTRPBF

IRF6716MTRPBF

MOSFET N-CH 25V 39A DIRECTFET

Infineon Technologies
3,431 -

RFQ

IRF6716MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V 2.4V @ 100µA 59 nC @ 4.5 V ±20V 5150 pF @ 13 V - 3.6W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB120N06S403ATMA2

IPB120N06S403ATMA2

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
3,248 -

RFQ

IPB120N06S403ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 120µA 160 nC @ 10 V ±20V 13150 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies
2,127 -

RFQ

IPI086N10N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R400CEXKSA1

IPA60R400CEXKSA1

MOSFET N-CH 600V 10.3A TO220-FP

Infineon Technologies
2,451 -

RFQ

IPA60R400CEXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 10.3A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP80R900P7XKSA1

IPP80R900P7XKSA1

MOSFET N-CH 800V 6A TO220-3

Infineon Technologies
547 -

RFQ

IPP80R900P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R600P7XKSA1

IPA60R600P7XKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies
3,385 -

RFQ

IPA60R600P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R600P6XKSA1

IPA60R600P6XKSA1

MOSFET N-CH 600V 4.9A TO220-FP

Infineon Technologies
2,655 -

RFQ

IPA60R600P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 4.9A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFH5306TRPBF

IRFH5306TRPBF

MOSFET N-CH 30V 15A/44A PQFN

Infineon Technologies
2,642 -

RFQ

IRFH5306TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 44A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1125 pF @ 15 V - 3.6W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5301TR2PBF

IRFH5301TR2PBF

MOSFET N-CH 30V 35A 5X6 PQFN

Infineon Technologies
2,165 -

RFQ

IRFH5301TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) - 1.85mOhm @ 50A, 10V 2.35V @ 100µA 77 nC @ 10 V - 5114 pF @ 15 V - - - Surface Mount
IRFH5302TR2PBF

IRFH5302TR2PBF

MOSFET N-CH 30V 32A 5X6 PQFN

Infineon Technologies
3,512 -

RFQ

IRFH5302TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 100A (Tc) - 2.1mOhm @ 50A, 10V 2.35V @ 100µA 76 nC @ 10 V - 4400 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFH5306TR2PBF

IRFH5306TR2PBF

MOSFET N-CH 30V 15A 5X6 PQFN

Infineon Technologies
3,064 -

RFQ

IRFH5306TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 44A (Tc) - 8.1mOhm @ 15A, 10V 2.35V @ 25µA 12 nC @ 4.5 V - 1125 pF @ 15 V - - - Surface Mount
IRF7739L2TR1PBF

IRF7739L2TR1PBF

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies
2,785 -

RFQ

IRF7739L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 375A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R180C7ATMA1

IPB60R180C7ATMA1

MOSFET N-CH 650V 13A TO263-3

Infineon Technologies
2,013 -

RFQ

IPB60R180C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 130mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7749L2TR1PBF

IRF7749L2TR1PBF

MOSFET N-CH 60V 33A DIRECTFET

Infineon Technologies
2,734 -

RFQ

IRF7749L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 375A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7759L2TR1PBF

IRF7759L2TR1PBF

MOSFET N-CH 75V 26A DIRECTFET

Infineon Technologies
3,313 -

RFQ

IRF7759L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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