Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPN60R2K1CE

IPN60R2K1CE

N-CHANNEL POWER MOSFET

Infineon Technologies
2,188 -

RFQ

IPN60R2K1CE

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
BTS244ZAKSA1

BTS244ZAKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,889 -

RFQ

BTS244ZAKSA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPN80R1K4P7

IPN80R1K4P7

N-CHANNEL POWER MOSFET

Infineon Technologies
2,993 -

RFQ

IPN80R1K4P7

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPP029N06NAK5A1

IPP029N06NAK5A1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,952 -

RFQ

IPP029N06NAK5A1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP028N08N3GHKSA1

IPP028N08N3GHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,402 -

RFQ

IPP028N08N3GHKSA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
BTS115AE6327

BTS115AE6327

N-CHANNEL POWER MOSFET

Infineon Technologies
3,156 -

RFQ

BTS115AE6327

Ficha técnica

Bulk TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 50 V 15.5A (Tc) 4.5V 120mOhm @ 7.8A, 4.5V 2.5V @ 1mA - ±10V 735 pF @ 25 V - 50W -55°C ~ 150°C (TJ) Through Hole
IPP05CN10NGXK

IPP05CN10NGXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,388 -

RFQ

IPP05CN10NGXK

Ficha técnica

Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 181 nC @ 10 V ±20V 12000 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS282ZE3180A

BTS282ZE3180A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,143 -

RFQ

BTS282ZE3180A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS282ZE3180AATMA1

BTS282ZE3180AATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,823 -

RFQ

BTS282ZE3180AATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP085N06LGIN

IPP085N06LGIN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,689 -

RFQ

IPP085N06LGIN

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 80A, 10V 2V @ 125µA 104 nC @ 10 V ±20V 3500 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS282ZE3180ANTMA1

BTS282ZE3180ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,797 -

RFQ

BTS282ZE3180ANTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS282ZE3230

BTS282ZE3230

N-CHANNEL POWER MOSFET

Infineon Technologies
2,065 -

RFQ

BTS282ZE3230

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP086N10N3

IPP086N10N3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,937 -

RFQ

IPP086N10N3

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS247ZE3062AATMA1

BTS247ZE3062AATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,491 -

RFQ

BTS247ZE3062AATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS282ZDELCO

BTS282ZDELCO

N-CHANNEL POWER MOSFET

Infineon Technologies
3,643 -

RFQ

BTS282ZDELCO

Ficha técnica

Bulk TEMPFET® Active N-Channel MOSFET (Metal Oxide) 49 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 36A, 10V 2V @ 240µA 232 nC @ 10 V ±20V 4800 pF @ 25 V - 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
IPP070N06NGIN

IPP070N06NGIN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,743 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP50CN10NGHKSA1

IPP50CN10NGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,151 -

RFQ

IPP50CN10NGHKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R299CP

IPP50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,649 -

RFQ

IPP50R299CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP260N06N3G

IPP260N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,725 -

RFQ

IPP260N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R190C3

IPP60R190C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,622 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 234235236237238239240241...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário