Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLS3036TRL

AUIRLS3036TRL

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,339 -

RFQ

AUIRLS3036TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS4030-7TRL

AUIRLS4030-7TRL

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies
3,654 -

RFQ

AUIRLS4030-7TRL

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS4030TRL

AUIRLS4030TRL

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
3,254 -

RFQ

AUIRLS4030TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLZ44ZSTRL

AUIRLZ44ZSTRL

MOSFET N-CH 55V 51A SMD DPAK

Infineon Technologies
3,308 -

RFQ

AUIRLZ44ZSTRL

Ficha técnica

Tape & Reel (TR) - Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) Surface Mount
IRF1902GTRPBF

IRF1902GTRPBF

MOSFET N-CH 20V 4.2A 8SO

Infineon Technologies
2,777 -

RFQ

IRF1902GTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) - 85mOhm @ 4A, 4.5V 700mV @ 250µA 7.5 nC @ 4.5 V - 310 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IRF6892STRPBF

IRF6892STRPBF

MOSFET N CH 25V 28A S3

Infineon Technologies
3,960 -

RFQ

IRF6892STRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6893MTRPBF

IRF6893MTRPBF

MOSFET N-CH 25V 29A DIRECTFET

Infineon Technologies
3,472 -

RFQ

IRF6893MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 168A (Tc) 4.5V, 10V 1.6mOhm @ 29A, 10V 2.1V @ 100µA 38 nC @ 4.5 V ±16V 3480 pF @ 13 V - 2.1W (Ta), 69W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8308MTRPBF

IRF8308MTRPBF

MOSFET N-CH 30V 27A DIRECTFET

Infineon Technologies
3,480 -

RFQ

IRF8308MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLR8743TRLPBF

IRLR8743TRLPBF

MOSFET N-CH 30V 160A DPAK

Infineon Technologies
2,983 -

RFQ

IRLR8743TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1018ES

AUIRF1018ES

MOSFET N-CH 60V 79A D2PAK

Infineon Technologies
2,474 -

RFQ

AUIRF1018ES

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1405

AUIRF1405

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,421 -

RFQ

AUIRF1405

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2804WL

AUIRF2804WL

MOSFET N-CH 40V 240A TO262-3

Infineon Technologies
3,682 -

RFQ

AUIRF2804WL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.8mOhm @ 187A, 10V 4V @ 250µA 225 nC @ 10 V ±20V 7978 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2805

AUIRF2805

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,146 -

RFQ

AUIRF2805

Ficha técnica

Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2805S

AUIRF2805S

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies
3,686 -

RFQ

AUIRF2805S

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2807

AUIRF2807

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
3,994 -

RFQ

AUIRF2807

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2903Z

AUIRF2903Z

MOSFET N-CH 30V 160A TO220AB

Infineon Technologies
2,909 -

RFQ

AUIRF2903Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2903ZL

AUIRF2903ZL

MOSFET N-CH 30V 160A TO262

Infineon Technologies
2,564 -

RFQ

AUIRF2903ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2903ZS

AUIRF2903ZS

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies
2,094 -

RFQ

AUIRF2903ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3004WL

AUIRF3004WL

MOSFET N-CH 40V 240A TO262-3

Infineon Technologies
2,778 -

RFQ

AUIRF3004WL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 195A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9450 pF @ 32 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3007

AUIRF3007

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
3,609 -

RFQ

AUIRF3007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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