Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUZ102SL-E3045A

BUZ102SL-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,039 -

RFQ

BUZ102SL-E3045A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ32IN

BUZ32IN

N-CHANNEL POWER MOSFET

Infineon Technologies
2,857 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUZ102SL

BUZ102SL

N-CHANNEL POWER MOSFET

Infineon Technologies
2,439 -

RFQ

BUZ102SL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ103SL

BUZ103SL

N-CHANNEL POWER MOSFET

Infineon Technologies
2,281 -

RFQ

BUZ103SL

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPW90R800C3

IPW90R800C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,088 -

RFQ

IPW90R800C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ101SL

BUZ101SL

N-CHANNEL POWER MOSFET

Infineon Technologies
3,597 -

RFQ

BUZ101SL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ355

BUZ355

N-CHANNEL POWER MOSFET

Infineon Technologies
3,199 -

RFQ

BUZ355

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ103SL-E3045A

BUZ103SL-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,670 -

RFQ

BUZ103SL-E3045A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ311

BUZ311

N-CHANNEL POWER MOSFET

Infineon Technologies
2,760 -

RFQ

BUZ311

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ72A

BUZ72A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,426 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUZ77B

BUZ77B

N-CHANNEL POWER MOSFET

Infineon Technologies
2,228 -

RFQ

BUZ77B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFZ24NSTRR

AUIRFZ24NSTRR

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
2,023 -

RFQ

AUIRFZ24NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44NSTRL

AUIRFZ44NSTRL

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies
800 -

RFQ

AUIRFZ44NSTRL

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) - 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V - 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL1404STRL

AUIRL1404STRL

MOSFET N-CH 40V 160A DPAK

Infineon Technologies
3,578 -

RFQ

AUIRL1404STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL7766M2TR

AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET

Infineon Technologies
3,819 -

RFQ

AUIRL7766M2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 10mOhm @ 31A, 10V 2.5V @ 150µA 66 nC @ 4.5 V ±16V 5305 pF @ 25 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7769L1TRPBFTR

IRF7769L1TRPBFTR

N-CHANNEL POWER MOSFET

Infineon Technologies
2,864 -

RFQ

IRF7769L1TRPBFTR

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 124A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLL024NTR

AUIRLL024NTR

MOSFET N-CH 55V 3.1A SOT223

Infineon Technologies
8,916 -

RFQ

AUIRLL024NTR

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR014NTRL

AUIRLR014NTRL

MOSFET N-CH 55V 10A DPAK

Infineon Technologies
2,362 -

RFQ

AUIRLR014NTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 3V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3915TRL

AUIRLR3915TRL

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
2,353 -

RFQ

AUIRLR3915TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V - 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3036-7TRL

AUIRLS3036-7TRL

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
2,680 -

RFQ

AUIRLS3036-7TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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