Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRF3315S

AUIRF3315S

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
3,709 -

RFQ

AUIRF3315S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3415

AUIRF3415

MOSFET N-CH 150V 43A TO220AB

Infineon Technologies
3,720 -

RFQ

AUIRF3415

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3504

AUIRF3504

MOSFET N-CH 40V 87A TO220AB

Infineon Technologies
3,472 -

RFQ

AUIRF3504

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) 10V 9.2mOhm @ 52A, 10V 4V @ 100µA 54 nC @ 10 V ±20V 2150 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3808S

AUIRF3808S

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies
2,201 -

RFQ

AUIRF3808S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF4905L

AUIRF4905L

MOSFET P-CH 55V 42A TO262

Infineon Technologies
2,589 -

RFQ

AUIRF4905L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF7207Q

AUIRF7207Q

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies
2,340 -

RFQ

AUIRF7207Q

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7478Q

AUIRF7478Q

MOSFET N-CH 60V 7A 8SO

Infineon Technologies
3,934 -

RFQ

AUIRF7478Q

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V 3V @ 250µA 31 nC @ 4.5 V ±20V 1740 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF9540N

AUIRF9540N

MOSFET P-CH 100V 23A TO220

Infineon Technologies
2,648 -

RFQ

AUIRF9540N

Ficha técnica

Tube Automotive, AEC-Q101 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF9Z34N

AUIRF9Z34N

MOSFET P-CH 55V 19A TO220AB

Infineon Technologies
3,440 -

RFQ

AUIRF9Z34N

Ficha técnica

Tube Automotive, AEC-Q101, HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB3806

AUIRFB3806

MOSFET N-CH 60V 43A TO220AB

Infineon Technologies
3,256 -

RFQ

AUIRFB3806

Ficha técnica

Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFL014N

AUIRFL014N

MOSFET N-CH 55V 1.5A SOT-223

Infineon Technologies
3,959 -

RFQ

AUIRFL014N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP46310Z

AUIRFP46310Z

AUTOMOTIVE POWER MOSFET

Infineon Technologies
2,735 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRFL024N

AUIRFL024N

MOSFET N-CH 55V 2.8A SOT-223

Infineon Technologies
2,028 -

RFQ

AUIRFL024N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP064N

AUIRFP064N

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies
2,264 -

RFQ

AUIRFP064N

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP1405

AUIRFP1405

MOSFET N-CH 55V 95A TO247AC

Infineon Technologies
3,234 -

RFQ

AUIRFP1405

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP2602

AUIRFP2602

MOSFET N-CH 24V 180A TO247AD

Infineon Technologies
3,380 -

RFQ

AUIRFP2602

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 180A (Tc) 10V 1.6mOhm @ 180A, 10V 4V @ 250µA 390 nC @ 10 V ±20V 11220 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP2907

AUIRFP2907

MOSFET N-CH 75V 90A TO247AC

Infineon Technologies
3,199 -

RFQ

AUIRFP2907

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP4004

AUIRFP4004

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies
3,853 -

RFQ

AUIRFP4004

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR1018E

AUIRFR1018E

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
3,669 -

RFQ

AUIRFR1018E

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2405

AUIRFR2405

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
2,787 -

RFQ

AUIRFR2405

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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