Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR2407

AUIRFR2407

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,926 -

RFQ

AUIRFR2407

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4620

AUIRFR4620

MOSFET N-CH 200V 24A DPAK

Infineon Technologies
2,269 -

RFQ

AUIRFR4620

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIRF7314PBF

IRFIRF7314PBF

P-CHANNEL POWER MOSFET

Infineon Technologies
3,649 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRFR9024N

AUIRFR9024N

MOSFET P-CH 55V 11A DPAK

Infineon Technologies
2,566 -

RFQ

AUIRFR9024N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3004

AUIRFS3004

MOSFET N-CH 40V 195A D2PAK-3

Infineon Technologies
2,024 -

RFQ

AUIRFS3004

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3006

AUIRFS3006

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,421 -

RFQ

AUIRFS3006

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3107

AUIRFS3107

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
2,036 -

RFQ

AUIRFS3107

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3206

AUIRFS3206

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
2,914 -

RFQ

AUIRFS3206

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3207Z

AUIRFS3207Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,465 -

RFQ

AUIRFS3207Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306

AUIRFS3306

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,582 -

RFQ

AUIRFS3306

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3307Z

AUIRFS3307Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,514 -

RFQ

AUIRFS3307Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3607

AUIRFS3607

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
3,823 -

RFQ

AUIRFS3607

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806

AUIRFS3806

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies
676 -

RFQ

AUIRFS3806

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS30067PPBF

IRFS30067PPBF

N-CHANNEL POWER MOSFET

Infineon Technologies
2,005 -

RFQ

IRFS30067PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IP111N15N3G

IP111N15N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,647 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BS0615N

BS0615N

N-CHANNEL POWER MOSFET

Infineon Technologies
2,362 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSC100N03MSG

BSC100N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,235 -

RFQ

BSC100N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC050N0LSG

BSC050N0LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,754 -

RFQ

BSC050N0LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC090BNS

BSC090BNS

N-CHANNEL POWER MOSFET

Infineon Technologies
2,570 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSC100N03LSG

BSC100N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,218 -

RFQ

BSC100N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 239240241242243244245246...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário