Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLU3110Z

AUIRLU3110Z

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
2,954 -

RFQ

AUIRLU3110Z

Ficha técnica

Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V - 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44Z

AUIRLZ44Z

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
977 -

RFQ

AUIRLZ44Z

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44ZL

AUIRLZ44ZL

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
3,028 -

RFQ

AUIRLZ44ZL

Ficha técnica

Tube,Tube - Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44ZS

AUIRLZ44ZS

MOSFET N-CH 55V 51A SMD DPAK

Infineon Technologies
2,277 -

RFQ

AUIRLZ44ZS

Ficha técnica

Tube - Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) Surface Mount
IRF1902GPBF

IRF1902GPBF

MOSFET N-CH 20V 4.2A 8SO

Infineon Technologies
2,303 -

RFQ

IRF1902GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) - 85mOhm @ 4A, 4.5V 700mV @ 250µA 7.5 nC @ 4.5 V - 310 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IRF3710ZGPBF

IRF3710ZGPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies
2,686 -

RFQ

IRF3710ZGPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250mA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104GPBF

IRF4104GPBF

MOSFET N CH 40V 75A TO220AB

Infineon Technologies
2,518 -

RFQ

IRF4104GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB096N03LG

IPB096N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,042 -

RFQ

IPB096N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSO130N03MSG

BSO130N03MSG

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,603 -

RFQ

BSO130N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSO080P03NS3 G

BSO080P03NS3 G

P-CHANNEL POWER MOSFET

Infineon Technologies
3,891 -

RFQ

BSO080P03NS3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP317PL6327

BSP317PL6327

P-CHANNEL MOSFET

Infineon Technologies
2,553 -

RFQ

BSP317PL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB025N08N3 G

IPB025N08N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,829 -

RFQ

IPB025N08N3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB240N03S4LR8ATMA1928

IPB240N03S4LR8ATMA1928

N-CHANNEL POWER MOSFET

Infineon Technologies
3,486 -

RFQ

IPB240N03S4LR8ATMA1928

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 240A (Tc) 4.5V, 10V 0.76mOhm @ 100A, 10V 2.2V @ 230µA 380 nC @ 10 V ±16V 26000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N04S302ATMA1

IPB120N04S302ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,943 -

RFQ

IPB120N04S302ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB097N08N3G

IPB097N08N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,257 -

RFQ

IPB097N08N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 9.7mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW50R280CEFKSA1

IPW50R280CEFKSA1

MOSFET N-CH 500V 13A TO247-3

Infineon Technologies
2,972 -

RFQ

IPW50R280CEFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R950CE

IPA50R950CE

MOSFET N-CH 500V 4.3A TO220-FP

Infineon Technologies
1,309 -

RFQ

IPA50R950CE

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V Super Junction 25.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD50R950CEBTMA1

IPD50R950CEBTMA1

MOSFET N-CH 500V 4.3A TO252-3

Infineon Technologies
3,096 -

RFQ

IPD50R950CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V Super Junction 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R280CEBTMA1

IPD50R280CEBTMA1

MOSFET N-CH 500V 13A TO252-3

Infineon Technologies
2,567 -

RFQ

IPD50R280CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA50R280CE

IPA50R280CE

MOSFET N-CH 500V 13A TO220-FP

Infineon Technologies
3,545 -

RFQ

IPA50R280CE

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 30.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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