Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD65R600E6TR

IPD65R600E6TR

N-CHANNEL POWER MOSFET

Infineon Technologies
3,660 -

RFQ

IPD65R600E6TR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB80R290C3A

IPB80R290C3A

N-CHANNEL POWER MOSFET

Infineon Technologies
3,544 -

RFQ

IPB80R290C3A

Ficha técnica

Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 117 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R600E6BTMA1

IPD60R600E6BTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,068 -

RFQ

IPD60R600E6BTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSL211SPL6327

BSL211SPL6327

P-CHANNEL POWER MOSFET

Infineon Technologies
2,402 -

RFQ

BSL211SPL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD50N06S3L-08

IPD50N06S3L-08

N-CHANNEL POWER MOSFET

Infineon Technologies
2,019 -

RFQ

IPD50N06S3L-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSL202SNL6327

BSL202SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,192 -

RFQ

BSL202SNL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS121AE3045ANTMA1

BTS121AE3045ANTMA1

MOSFET N CH 100V 22A TO-220AB

Infineon Technologies
3,309 -

RFQ

BTS121AE3045ANTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V 100mOhm @ 9.5A, 4.5V 2.5V @ 1mA - ±10V 1500 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R520C6

IPA60R520C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,879 -

RFQ

IPA60R520C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R650CEZKSA2

IPA50R650CEZKSA2

N-CHANNEL POWER MOSFET

Infineon Technologies
3,305 -

RFQ

IPA50R650CEZKSA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB260N06N3G

IPB260N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,123 -

RFQ

IPB260N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB50R250CP

IPB50R250CP

N-CHANNEL POWER MOSFET

Infineon Technologies
3,759 -

RFQ

IPB50R250CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB07N60S5

SPB07N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
3,607 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPD060N03LGINCT

IPD060N03LGINCT

N-CHANNEL POWER MOSFET

Infineon Technologies
3,660 -

RFQ

IPD060N03LGINCT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB80N06S2LH5

IPB80N06S2LH5

N-CHANNEL POWER MOSFET

Infineon Technologies
2,384 -

RFQ

IPB80N06S2LH5

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 190 nC @ 10 V ±20V 5000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R600C6

IPB65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,939 -

RFQ

IPB65R600C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7342D2TRPBF

IRF7342D2TRPBF

MOSFET P-CH 55V 3.4A 8-SOIC

Infineon Technologies
3,055 -

RFQ

IRF7342D2TRPBF

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 55 V 3.4A (Ta) - 105mOhm @ 3.4A, 10V 1V @ 250µA 38 nC @ 10 V - 690 pF @ 25 V Schottky Diode (Isolated) - - Surface Mount
IRFR18N15DTRPBF

IRFR18N15DTRPBF

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
3,328 -

RFQ

IRFR18N15DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6811STRPBF

IRF6811STRPBF

MOSFET N CH 25V 19A DIRECTFET

Infineon Technologies
3,471 -

RFQ

IRF6811STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) 4.5V, 10V 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6894MTRPBF

IRF6894MTRPBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
3,375 -

RFQ

IRF6894MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V 2.1V @ 100µA 39 nC @ 4.5 V ±16V 4160 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLR3802TRPBF

IRLR3802TRPBF

MOSFET N-CH 12V 84A DPAK

Infineon Technologies
2,459 -

RFQ

IRLR3802TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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