Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA50R650CE

IPA50R650CE

MOSFET N-CH 500V 6.1A TO220-FP

Infineon Technologies
3,440 -

RFQ

IPA50R650CE

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V Super Junction 27.2W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA50R380CE

IPA50R380CE

MOSFET N-CH 500V 9.9A TO220-FP

Infineon Technologies
2,792 -

RFQ

IPA50R380CE

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9.9A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V Super Junction 29.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R190CEFKSA1

IPW50R190CEFKSA1

MOSFET N-CH 500V 18.5A TO247-3

Infineon Technologies
3,642 -

RFQ

IPW50R190CEFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V Super Junction 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC017N04NM5ATMA1

ISC017N04NM5ATMA1

MOSFET N-CH 40V 193A TDSON-8

Infineon Technologies
3,604 -

RFQ

ISC017N04NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 193A (Tc) 7V, 10V 1.7mOhm @ 50A, 10V 3.4V @ 60µA 67 nC @ 10 V ±20V 4800 pF @ 20 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50R800CEBTMA1

IPD50R800CEBTMA1

MOSFET N CH 500V 5A TO252

Infineon Technologies
3,834 -

RFQ

IPD50R800CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V Super Junction 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R650CEBTMA1

IPD50R650CEBTMA1

MOSFET N-CH 500V 6.1A TO252-3

Infineon Technologies
2,243 -

RFQ

IPD50R650CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 47W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPI07N60S5

SPI07N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
2,428 -

RFQ

SPI07N60S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP11N65C3

SPP11N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,839 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPP15P10P H

SPP15P10P H

P-CHANNEL POWER MOSFET

Infineon Technologies
2,923 -

RFQ

SPP15P10P H

Ficha técnica

Bulk Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48 nC @ 10 V ±20V 1280 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP24N60CFD

SPP24N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
3,099 -

RFQ

SPP24N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI20N65C3

SPI20N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,724 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPU03N60S5

SPU03N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
2,322 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPW12N50C3XK

SPW12N50C3XK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,441 -

RFQ

SPW12N50C3XK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB26CN10N

IPB26CN10N

N-CHANNEL POWER MOSFET

Infineon Technologies
2,858 -

RFQ

IPB26CN10N

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 26mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP373E6327

BSP373E6327

N-CHANNEL POWER MOSFET

Infineon Technologies
3,583 -

RFQ

BSP373E6327

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Ta) 10V 300mOhm @ 1.7A, 10V 4V @ 1mA - ±20V 550 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD12CN10N

IPD12CN10N

N-CHANNEL POWER MOSFET

Infineon Technologies
3,341 -

RFQ

IPD12CN10N

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.4mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N06S3L-06

IPD50N06S3L-06

N-CHANNEL POWER MOSFET

Infineon Technologies
3,267 -

RFQ

IPD50N06S3L-06

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI075N15N3

IPI075N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,617 -

RFQ

IPI075N15N3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI65R099C6

IPI65R099C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,284 -

RFQ

IPI65R099C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS169L6327

BSS169L6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,568 -

RFQ

BSS169L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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