Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD65R250E6

IPD65R250E6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,225 -

RFQ

IPD65R250E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI80404S3-03

IPI80404S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies
3,413 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFS7437-7PPBF

IRFS7437-7PPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,741 -

RFQ

IRFS7437-7PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR7440PBF

IRFR7440PBF

MOSFET N CH 40V 90A DPAK

Infineon Technologies
2,570 -

RFQ

IRFR7440PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7446TR2PBF

IRFH7446TR2PBF

MOSFET N CH 40V 85A PQFN 5X6

Infineon Technologies
3,628 -

RFQ

IRFH7446TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) - 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V - 3174 pF @ 25 V - - - Surface Mount
IRFS7437PBF

IRFS7437PBF

MOSFET N CH 40V 195A D2PAK

Infineon Technologies
2,430 -

RFQ

IRFS7437PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60N10S412ATMA1

IPD60N10S412ATMA1

MOSFET N-CH 100V 60A TO252-3

Infineon Technologies
3,263 -

RFQ

IPD60N10S412ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 12.2mOhm @ 60A, 10V 3.5V @ 46µA 34 nC @ 10 V ±20V 2470 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7440PBF

IRFS7440PBF

MOSFET N CH 40V 120A D2PAK

Infineon Technologies
3,263 -

RFQ

IRFS7440PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 135 nC @ 10 V ±20V 4730 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7820PBF

IRF7820PBF

MOSFET N CH 200V 3.7A 8-SO

Infineon Technologies
3,028 -

RFQ

IRF7820PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 78mOhm @ 2.2A, 10V 5V @ 100µA 44 nC @ 10 V ±20V 1750 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH7440TR2PBF

IRFH7440TR2PBF

MOSFET N-CH 40V 85A 8PQFN

Infineon Technologies
3,349 -

RFQ

IRFH7440TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) - 2.4mOhm @ 50A, 10V 3.9V @ 100µA 138 nC @ 10 V - 4574 pF @ 25 V - - - Surface Mount
SPB16N50C3

SPB16N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,345 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPD15P10P G

SPD15P10P G

P-CHANNEL POWER MOSFET

Infineon Technologies
3,595 -

RFQ

SPD15P10P G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP08P06PXK

SPP08P06PXK

P-CHANNEL POWER MOSFET

Infineon Technologies
2,001 -

RFQ

SPP08P06PXK

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPU21N05L

SPU21N05L

N-CHANNEL POWER MOSFET

Infineon Technologies
3,281 -

RFQ

SPU21N05L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPU07N60S5IN

SPU07N60S5IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,589 -

RFQ

SPU07N60S5IN

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
SPW12N50C3IN

SPW12N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,473 -

RFQ

SPW12N50C3IN

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI126N10N3G

IPI126N10N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,011 -

RFQ

IPI126N10N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSZ049N03LSCGATMA1

BSZ049N03LSCGATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,841 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFR3518TRPBF

IRFR3518TRPBF

MOSFET N-CH 80V 38A DPAK

Infineon Technologies
3,072 -

RFQ

IRFR3518TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 38A (Tc) 10V 29mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1710 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9383MTR1PBF

IRF9383MTR1PBF

MOSFET P-CH 30V 22A DIRECTFET

Infineon Technologies
2,226 -

RFQ

IRF9383MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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