Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPLK80R600P7ATMA1

IPLK80R600P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
3,348 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
SPU03N60C3

SPU03N60C3

POWER FIELD-EFFECT TRANSISTOR, 3

Infineon Technologies
3,744 -

RFQ

SPU03N60C3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709ZSTRRPBF

IRF3709ZSTRRPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
2,906 -

RFQ

IRF3709ZSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70N12S311ATMA1

IPD70N12S311ATMA1

MOSFET N-CH 120V 70A TO252-31

Infineon Technologies
2,812 -

RFQ

IPD70N12S311ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 11.1mOhm @ 70A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD30N06S2L23ATMA1

IPD30N06S2L23ATMA1

MOSFET N-CH 55V 30A TO252-3

Infineon Technologies
3,749 -

RFQ

IPD30N06S2L23ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1091 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD78CN10NGBUMA1

IPD78CN10NGBUMA1

MOSFET N-CH 100V 13A TO252-3

Infineon Technologies
3,073 -

RFQ

IPD78CN10NGBUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 78mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD07N20GBTMA1

SPD07N20GBTMA1

MOSFET N-CH 200V 7A TO252-3

Infineon Technologies
2,116 -

RFQ

SPD07N20GBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA 31.5 nC @ 10 V ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFHM831TRPBF

IRFHM831TRPBF

MOSFET N-CH 30V 14A/40A PQFN

Infineon Technologies
2,458 -

RFQ

IRFHM831TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 40A (Tc) 4.5V, 10V 7.8mOhm @ 12A, 10V 2.35V @ 25µA 16 nC @ 10 V ±20V 1050 pF @ 25 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM8329TRPBF

IRFHM8329TRPBF

MOSFET N-CH 30V 16A/57A PQFN

Infineon Technologies
8,726 -

RFQ

IRFHM8329TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 57A (Tc) 4.5V, 10V 6.1mOhm @ 20A, 10V 2.2V @ 25µA 26 nC @ 10 V ±20V 1710 pF @ 10 V - 2.6W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6725MTRPBF

IRF6725MTRPBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies
2,826 -

RFQ

IRF6725MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD42DP15LMATMA1

IPD42DP15LMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies
3,966 -

RFQ

IPD42DP15LMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 150 V 1.7A (Ta), 9A (Tc) 4.5V, 10V 420mOhm @ 8.2A, 10V 2V @ 1.04mA 43 nC @ 10 V ±20V 2100 pF @ 75 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7110TRPBF

IRFH7110TRPBF

MOSFET N-CH 100V 11A/58A 8PQFN

Infineon Technologies
1,000 -

RFQ

IRFH7110TRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 58A (Tc) 10V 13.5mOhm @ 35A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3240 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR2905ZTRLPBF

IRLR2905ZTRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,047 -

RFQ

IRLR2905ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC90N10S5N062ATMA1

IAUC90N10S5N062ATMA1

MOSFET N-CH 100V 90A TDSON-8-34

Infineon Technologies
2,516 -

RFQ

IAUC90N10S5N062ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 6.2mOhm @ 45A, 10V 3.8V @ 59µA 36 nC @ 10 V ±20V 3275 pF @ 50 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010NE2LSIATMA1

BSC010NE2LSIATMA1

MOSFET N-CH 25V 38A/100A TDSON

Infineon Technologies
3,795 -

RFQ

BSC010NE2LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 38A (Ta), 100A (Tc) 4.5V, 10V 1.05mOhm @ 30A, 10V 2V @ 250µA 59 nC @ 10 V ±20V 4200 pF @ 12 V - 2.5W (Ta), 96W (Tc) - Surface Mount
IPD80N04S3-06

IPD80N04S3-06

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,506 -

RFQ

IPD80N04S3-06

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI60R190C6

IPI60R190C6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,330 -

RFQ

IPI60R190C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPA20N60C3

SPA20N60C3

MOSFET N-CH 600V 20.7A TO220-111

Infineon Technologies
3,584 -

RFQ

SPA20N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) - 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N60C3

SPP15N60C3

MOSFET N-CH 600V 15A TO220-3-1

Infineon Technologies
2,033 -

RFQ

SPP15N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) - 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSZ076N06NS3G

BSZ076N06NS3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,932 -

RFQ

BSZ076N06NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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