Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3709STRLPBF-INF

IRF3709STRLPBF-INF

HEXFET SMPS POWER MOSFET

Infineon Technologies
2,612 -

RFQ

IRF3709STRLPBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR3802TRPBF-INF

IRLR3802TRPBF-INF

IRLR3802 - HEXFET POWER MOSFET

Infineon Technologies
3,412 -

RFQ

IRLR3802TRPBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ009NE2LS5ATMA1

BSZ009NE2LS5ATMA1

MOSFET N-CH 25V 39A/40A TSDSON

Infineon Technologies
3,226 -

RFQ

BSZ009NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 40A (Tc) 4.5V, 10V 900mOhm @ 20A, 10V 2V @ 250µA 124 nC @ 10 V ±16V 5500 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL2203NPBF-INF

IRL2203NPBF-INF

HEXFET POWER MOSFET

Infineon Technologies
3,374 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4410PBF-INF

IRFS4410PBF-INF

HEXFET POWER MOSFET

Infineon Technologies
3,444 -

RFQ

IRFS4410PBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) - 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1018EPBF-INF

IRFR1018EPBF-INF

HEXFET POWER MOSFET

Infineon Technologies
3,341 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) - 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DTRLP-INF

IRFR18N15DTRLP-INF

HEXFET SMPS POWER MOSFET

Infineon Technologies
2,370 -

RFQ

IRFR18N15DTRLP-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V - 900 pF @ 25 V - - - Surface Mount
IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

MOSFET N-CH 25V 41A/298A 8TSON

Infineon Technologies
3,177 -

RFQ

IQE006NE2LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 298A (Tc) 4.5V, 10V 650mOhm @ 20A, 10V 2V @ 250µA 82.1 nC @ 10 V ±16V 5453 pF @ 12 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IQE006NE2LM5CGATMA1

IQE006NE2LM5CGATMA1

MOSFET N-CH 25V 41A/298A IPAK

Infineon Technologies
2,632 -

RFQ

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 298A (Tc) - 650mOhm @ 20A, 10V 2V @ 250µA 82.1 nC @ 10 V ±16V 5453 pF @ 12 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF5805TRPBF-INF

IRF5805TRPBF-INF

IRF5805 - TRANSISTOR

Infineon Technologies
3,096 -

RFQ

IRF5805TRPBF-INF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISC0806NLSATMA1

ISC0806NLSATMA1

MOSFET N-CH 100V 16A/97A TDSON

Infineon Technologies
2,496 -

RFQ

ISC0806NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 97A (Tc) 4.5V, 10V 5.4mOhm @ 50A, 10V 2.3V @ 61µA 49 nC @ 10 V ±20V 3400 pF @ 50 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC037N08NS5TATMA1

BSC037N08NS5TATMA1

MOSFET N-CH 80V 22A/100A TDSON

Infineon Technologies
2,138 -

RFQ

BSC037N08NS5TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N04S2-H4

IPP80N04S2-H4

N-CHANNEL POWER MOSFET

Infineon Technologies
3,871 -

RFQ

IPP80N04S2-H4

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW90R1K0C3

IPW90R1K0C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,550 -

RFQ

IPW90R1K0C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IAUC100N08S5N031ATMA1

IAUC100N08S5N031ATMA1

MOSFET N-CH 80V 100A TDSON-8-34

Infineon Technologies
2,031 -

RFQ

IAUC100N08S5N031ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.1mOhm @ 50A, 10V 3.8V @ 95µA 76 nC @ 10 V ±20V 5525 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA180N04S5N012AUMA1

IAUA180N04S5N012AUMA1

MOSFET N-CH 40V 180A HSOF-5-1

Infineon Technologies
3,608 -

RFQ

IAUA180N04S5N012AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 7V, 10V 1.2mOhm @ 90A, 10V 3.4V @ 70µA 100 nC @ 10 V ±20V 6158 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI60R380C6

IPI60R380C6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,201 -

RFQ

IPI60R380C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IQE030N06NM5ATMA1

IQE030N06NM5ATMA1

TRENCH 40<-<100V PG-TSON-8

Infineon Technologies
3,677 -

RFQ

IQE030N06NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 137A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IQE030N06NM5CGATMA1

IQE030N06NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

Infineon Technologies
3,216 -

RFQ

IQE030N06NM5CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 137A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IRF8327STR1PBF

IRF8327STR1PBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,496 -

RFQ

IRF8327STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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