Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP65R074C6XKSA1

IPP65R074C6XKSA1

MOSFET N-CH 650V 57.7A TO220-3

Infineon Technologies
3,788 -

RFQ

IPP65R074C6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 57.7A (Tc) 10V 74mOhm @ 13.9A, 10V 3.5V @ 1.4mA 17 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R099C6XKSA1

IPP65R099C6XKSA1

MOSFET N-CH 650V 38A TO220-3

Infineon Technologies
2,889 -

RFQ

IPP65R099C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 15 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies
3,080 -

RFQ

IPS65R1K4C6AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R1K4CEBKMA1

IPU50R1K4CEBKMA1

MOSFET N-CH 500V 3.1A TO251-3

Infineon Technologies
2,734 -

RFQ

IPU50R1K4CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R2K0CEBKMA1

IPU50R2K0CEBKMA1

MOSFET N-CH 500V 2.4A TO251-3

Infineon Technologies
43,033 -

RFQ

IPU50R2K0CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R3K0CEBKMA1

IPU50R3K0CEBKMA1

MOSFET N-CH 500V 1.7A TO251-3

Infineon Technologies
25,539 -

RFQ

IPU50R3K0CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.7A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 18W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R2K0C6BKMA1

IPU60R2K0C6BKMA1

MOSFET N-CH 600V 2.4A TO251-3

Infineon Technologies
353,761 -

RFQ

IPU60R2K0C6BKMA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R600C6BKMA1

IPU60R600C6BKMA1

MOSFET N-CH 600V 7.3A TO251-3

Infineon Technologies
2,432 -

RFQ

IPU60R600C6BKMA1

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R950C6BKMA1

IPU60R950C6BKMA1

MOSFET N-CH 600V 4.4A TO251-3

Infineon Technologies
3,955 -

RFQ

IPU60R950C6BKMA1

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 1.5 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7002H6327XTSA2

2N7002H6327XTSA2

MOSFET N-CH 60V 300MA SOT23-3

Infineon Technologies
398,938 -

RFQ

2N7002H6327XTSA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 10 V ±20V 20 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84PH6433XTMA1

BSS84PH6433XTMA1

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies
3,237 -

RFQ

BSS84PH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Not For New Designs P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU3410PBF

IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

Infineon Technologies
3,669 -

RFQ

IRFU3410PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IQE065N10NM5CGATMA1

IQE065N10NM5CGATMA1

TRENCH >=100V PG-TTFN-9

Infineon Technologies
2,793 -

RFQ

IQE065N10NM5CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 42 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IPB160N04S4H1ATMA1

IPB160N04S4H1ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
2,085 -

RFQ

IPB160N04S4H1ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 110µA 137 nC @ 10 V ±20V 10920 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB048N06LG

IPB048N06LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,560 -

RFQ

IPB048N06LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF3205ZLPBF

IRF3205ZLPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies
2,612 -

RFQ

IRF3205ZLPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6728MTR1PBF

IRF6728MTR1PBF

MOSFET N-CH 30V 23A DIRECTFET

Infineon Technologies
2,574 -

RFQ

IRF6728MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 140A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4110 pF @ 15 V - 2.1W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6810STR1PBF

IRF6810STR1PBF

MOSFET N CH 25V 16A S1

Infineon Technologies
2,186 -

RFQ

IRF6810STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 16A, 10V 2.1V @ 25µA 11 nC @ 4.5 V ±16V 1038 pF @ 13 V - 2.1W (Ta), 20W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6892STR1PBF

IRF6892STR1PBF

MOSFET N-CH 25V 28A DIRECTFET

Infineon Technologies
3,211 -

RFQ

IRF6892STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6893MTR1PBF

IRF6893MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET

Infineon Technologies
3,496 -

RFQ

IRF6893MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 168A (Tc) 4.5V, 10V 1.6mOhm @ 29A, 10V 2.1V @ 100µA 38 nC @ 4.5 V ±16V 3480 pF @ 13 V - 2.1W (Ta), 69W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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