Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7526D1TRPBF

IRF7526D1TRPBF

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
3,847 -

RFQ

IRF7526D1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8302MTR1PBF

IRF8302MTR1PBF

MOSFET N CH 30V 31A MX

Infineon Technologies
2,748 -

RFQ

IRF8302MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8304MTR1PBF

IRF8304MTR1PBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies
2,199 -

RFQ

IRF8304MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8308MTR1PBF

IRF8308MTR1PBF

MOSFET N-CH 30V 27A DIRECTFET

Infineon Technologies
2,148 -

RFQ

IRF8308MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH8316TRPBF

IRFH8316TRPBF

MOSFET N-CH 30V 27A/50A 8PQFN

Infineon Technologies
4,000 -

RFQ

IRFH8316TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 50A (Tc) 4.5V, 10V 2.95mOhm @ 20A, 10V 2.2V @ 50µA 59 nC @ 10 V ±20V 3610 pF @ 10 V - 3.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH8321TRPBF

IRFH8321TRPBF

MOSFET N CH 30V 21A PQFN5X6

Infineon Technologies
3,860 -

RFQ

IRFH8321TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 83A (Tc) 4.5V, 10V 4.9mOhm @ 20A, 10V 2V @ 50µA 59 nC @ 10 V ±20V 2600 pF @ 10 V - 3.4W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLH5036TRPBF

IRLH5036TRPBF

MOSFET N-CH 60V 20A/100A 8PQFN

Infineon Technologies
2,313 -

RFQ

IRLH5036TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 100A (Tc) 4.5V, 10V 4.4mOhm @ 50A, 10V 2.5V @ 150µA 90 nC @ 10 V ±16V 5360 pF @ 25 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLMS2002GTRPBF

IRLMS2002GTRPBF

MOSFET N-CH 20V 6.5A MICRO6

Infineon Technologies
3,120 -

RFQ

IRLMS2002GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR7843CTRPBF

IRLR7843CTRPBF

MOSFET N-CH 30V 161A DPAK

Infineon Technologies
2,661 -

RFQ

IRLR7843CTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S3-04

IPB80N04S3-04

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
2,245 -

RFQ

IPB80N04S3-04

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS316NH6327XTSA1

BSS316NH6327XTSA1

MOSFET N-CH 30V 1.4A SOT23-3

Infineon Technologies
172,334 -

RFQ

BSS316NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6 nC @ 5 V ±20V 94 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS816NWH6327XTSA1

BSS816NWH6327XTSA1

MOSFET N-CH 20V 1.4A SOT323-3

Infineon Technologies
50,222 -

RFQ

BSS816NWH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 1.4A (Ta) 1.8V, 2.5V 160mOhm @ 1.4A, 2.5V 750mV @ 3.7µA 0.6 nC @ 2.5 V ±8V 180 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF135S203

IRF135S203

MOSFET N-CH 135V 129A TO263-3

Infineon Technologies
2,142 -

RFQ

IRF135S203

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 135 V 129A (Tc) 10V 8.4mOhm @ 77A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 9700 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA250N04S6N007EAUMA1

IAUA250N04S6N007EAUMA1

MOSFET_(20V 40V)

Infineon Technologies
3,609 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7Ohm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF40R207

IRF40R207

MOSFET N-CH 40V 56A TO252

Infineon Technologies
12,520 -

RFQ

IRF40R207

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 6V, 10V 5.1mOhm @ 55A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V 2110 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7404TRPBF

IRF7404TRPBF

MOSFET P-CH 20V 6.7A 8SO

Infineon Technologies
84,508 -

RFQ

IRF7404TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6.7A (Ta) 2.7V, 4.5V 40mOhm @ 3.2A, 4.5V 700mV @ 250µA (Min) 50 nC @ 4.5 V ±12V 1500 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS214NH6327XTSA1

BSS214NH6327XTSA1

MOSFET N-CH 20V 1.5A SOT23-3

Infineon Technologies
363,917 -

RFQ

BSS214NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 140mOhm @ 1.5A, 4.5V 1.2V @ 3.7µA 0.8 nC @ 5 V ±12V 143 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS214NWH6327XTSA1

BSS214NWH6327XTSA1

MOSFET N-CH 20V 1.5A SOT323-3

Infineon Technologies
71,901 -

RFQ

BSS214NWH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 140mOhm @ 1.5A, 4.5V 1.2V @ 3.7µA 0.8 nC @ 5 V ±12V 143 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISC030N10NM6ATMA1

ISC030N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,554 -

RFQ

ISC030N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 179A (Tc) 8V, 10V 3mOhm @ 50A, 10V 3.3V @ 109µA 69 nC @ 10 V ±20V 5200 pF @ 50 V - 3W (Ta), 208W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R280C6

IPW60R280C6

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies
2,316 -

RFQ

IPW60R280C6

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) - 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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