Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1

MOSFET N-CH 40V 27A/100A TDSON

Infineon Technologies
39,138 -

RFQ

BSC022N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2.3V @ 250µA 28 nC @ 10 V ±20V 1900 pF @ 20 V - 3W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5010TRPBF

IRFH5010TRPBF

MOSFET N-CH 100V 13A/100A 8PQFN

Infineon Technologies
4,872 -

RFQ

IRFH5010TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 100A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V ±20V 4340 pF @ 25 V - 3.6W (Ta), 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC070N10NS3GATMA1

BSC070N10NS3GATMA1

MOSFET N-CH 100V 90A TDSON-8

Infineon Technologies
5,529 -

RFQ

BSC070N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 7mOhm @ 50A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 4000 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW60R299CP

IPW60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
3,992 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1

MOSFET N-CH 25V 35A/40A TSDSON

Infineon Technologies
2,813 -

RFQ

BSZ011NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Ta), 40A (Tc) 4.5V, 10V 1.1mOhm @ 20A, 10V 2V @ 250µA 50 nC @ 10 V ±16V 3400 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R045C7ATMA1

IPB65R045C7ATMA1

MOSFET N-CH 650V 46A D2PAK

Infineon Technologies
3,821 -

RFQ

IPB65R045C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R225C7ATMA1

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

Infineon Technologies
3,238 -

RFQ

IPB65R225C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC010N06NM5ATMA1

ISC010N06NM5ATMA1

OPTIMOS5 60 V POWER MOSFET IN SU

Infineon Technologies
2,331 -

RFQ

ISC010N06NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 330A (Tc) 6V, 10V 1.05mOhm @ 50A, 10V 3.3V @ 147µA 143 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4127TRLPBF

IRFS4127TRLPBF

MOSFET N-CH 200V 72A D2PAK

Infineon Technologies
2,474 -

RFQ

IRFS4127TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434-7PPBF

IRFS7434-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,697 -

RFQ

IRFS7434-7PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7446PBF

IRFR7446PBF

MOSFET N-CH 40V 56A TO252

Infineon Technologies
3,589 -

RFQ

IRFR7446PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 6V, 10V 3.9mOhm @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V 3150 pF @ 25 V - 98W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R299CPXK

IPA60R299CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,280 -

RFQ

IPA60R299CPXK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R199CP

IPW50R199CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,270 -

RFQ

IPW50R199CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLML6244TRPBF

IRLML6244TRPBF

MOSFET N-CH 20V 6.3A SOT23

Infineon Technologies
620,162 -

RFQ

IRLML6244TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.3A (Ta) 2.5V, 4.5V 21mOhm @ 6.3A, 4.5V 1.1V @ 10µA 8.9 nC @ 4.5 V ±12V 700 pF @ 16 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML2060TRPBF

IRLML2060TRPBF

MOSFET N-CH 60V 1.2A SOT23

Infineon Technologies
28,299 -

RFQ

IRLML2060TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 1.2A (Ta) 4.5V, 10V 480mOhm @ 1.2A, 10V 2.5V @ 25µA 0.67 nC @ 4.5 V ±16V 64 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0040TRPBF

IRLML0040TRPBF

MOSFET N-CH 40V 3.6A SOT23

Infineon Technologies
78,630 -

RFQ

IRLML0040TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 3.6A (Ta) 4.5V, 10V 56mOhm @ 3.6A, 10V 2.5V @ 25µA 3.9 nC @ 4.5 V ±16V 266 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0060TRPBF

IRLML0060TRPBF

MOSFET N-CH 60V 2.7A SOT23

Infineon Technologies
2,188 -

RFQ

IRLML0060TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Ta) 4.5V, 10V 92mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5 nC @ 4.5 V ±16V 290 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS169H6327XTSA1

BSS169H6327XTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
92,729 -

RFQ

BSS169H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.8 nC @ 7 V ±20V 68 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB65R155CFD7ATMA1

IPB65R155CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
3,024 -

RFQ

IPB65R155CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

Infineon Technologies
3,131 -

RFQ

AUIRFP4409

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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