Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC025N08LS5ATMA1

BSC025N08LS5ATMA1

MOSFET N-CH 80V 100A TDSON-8-7

Infineon Technologies
2,183 -

RFQ

BSC025N08LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.3V @ 115µA 55 nC @ 4.5 V ±20V 7500 pF @ 40 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

Infineon Technologies
2,923 -

RFQ

IAUC120N04S6N006ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tj) 7V, 10V 0.6mOhm @ 60A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 10117 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120P04P404ATMA1

IPB120P04P404ATMA1

MOSFET P-CH 40V 120A D2PAK

Infineon Technologies
3,083 -

RFQ

IPB120P04P404ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS314PEH6327XTSA1

BSS314PEH6327XTSA1

MOSFET P-CH 30V 1.5A SOT23-3

Infineon Technologies
71,971 -

RFQ

BSS314PEH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 140mOhm @ 1.5A, 10V 2V @ 6.3µA 2.9 nC @ 10 V ±20V 294 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS806NH6327XTSA1

BSS806NH6327XTSA1

MOSFET N-CH 20V 2.3A SOT23-3

Infineon Technologies
124,165 -

RFQ

BSS806NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 1.8V, 2.5V 57mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7 nC @ 2.5 V ±8V 529 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML6246TRPBF

IRLML6246TRPBF

MOSFET N-CH 20V 4.1A SOT23

Infineon Technologies
70,815 -

RFQ

IRLML6246TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.5V, 4.5V 46mOhm @ 4.1A, 4.5V 1.1V @ 5µA 3.5 nC @ 4.5 V ±12V 290 pF @ 16 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML6346TRPBF

IRLML6346TRPBF

MOSFET N-CH 30V 3.4A SOT23

Infineon Technologies
229,621 -

RFQ

IRLML6346TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.4A (Ta) 2.5V, 4.5V 63mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.9 nC @ 4.5 V ±12V 270 pF @ 24 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML2803TRPBF

IRLML2803TRPBF

MOSFET N-CH 30V 1.2A SOT23

Infineon Technologies
539,560 -

RFQ

IRLML2803TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 4.5V, 10V 250mOhm @ 910mA, 10V 1V @ 250µA 5 nC @ 10 V ±20V 85 pF @ 25 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPL65R200CFD7AUMA1

IPL65R200CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies
2,068 -

RFQ

IPL65R200CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 200mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 81W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFS75347PPBF

IRFS75347PPBF

HEXFET POWER MOSFET

Infineon Technologies
2,223 -

RFQ

IRFS75347PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.7V @ 250µA 300 nC @ 10 V ±20V 9990 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB021N06N3G

IPB021N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,677 -

RFQ

IPB021N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R190E6

IPA60R190E6

600V 0.19OHM N-CHANNEL MOSFET

Infineon Technologies
2,476 -

RFQ

IPA60R190E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB200N15N3

IPB200N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,639 -

RFQ

IPB200N15N3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLML6302TRPBF

IRLML6302TRPBF

MOSFET P-CH 20V 780MA SOT23

Infineon Technologies
308,726 -

RFQ

IRLML6302TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 780mA (Ta) 2.7V, 4.5V 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V 97 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML5103TRPBF

IRLML5103TRPBF

MOSFET P-CH 30V 760MA SOT23

Infineon Technologies
269,031 -

RFQ

IRLML5103TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 760mA (Ta) 4.5V, 10V 600mOhm @ 600mA, 10V 1V @ 250µA 5.1 nC @ 10 V ±20V 75 pF @ 25 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP149H6327XTSA1

BSP149H6327XTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
9,284 -

RFQ

BSP149H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC022N04LSATMA1

BSC022N04LSATMA1

MOSFET N-CH 40V 100A TDSON-8-6

Infineon Technologies
9,880 -

RFQ

BSC022N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 250µA 37 nC @ 10 V ±20V 2600 pF @ 20 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0501NSIATMA1

BSC0501NSIATMA1

MOSFET N-CH 30V 29A/100A TDSON

Infineon Technologies
15,000 -

RFQ

BSC0501NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2V @ 250µA 33 nC @ 10 V ±20V 2200 pF @ 15 V Schottky Diode (Body) 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0702LSATMA1

BSC0702LSATMA1

MOSFET N-CH 60V 100A SUPERSO8

Infineon Technologies
2,374 -

RFQ

BSC0702LSATMA1

Ficha técnica

Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 2.3mOhm @ 50A, 10V 2.3V @ 49µA 30 nC @ 4.5 V ±20V 4400 pF @ 30 V Standard 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ019N03LSATMA1

BSZ019N03LSATMA1

MOSFET N-CH 30V 22A . 40A TSDSON

Infineon Technologies
14,627 -

RFQ

BSZ019N03LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta). 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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