Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

MOSFET N-CH 40V 36A/180A 2WDSON

Infineon Technologies
2,340 -

RFQ

BSB014N04LX3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 180A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2V @ 250µA 196 nC @ 10 V ±20V 16900 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSB015N04NX3GXUMA1

BSB015N04NX3GXUMA1

MOSFET N-CH 40V 36A/180A 2WDSON

Infineon Technologies
2,214 -

RFQ

BSB015N04NX3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 180A (Tc) 10V 1.5mOhm @ 30A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 12000 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC046N10NS3GATMA1

BSC046N10NS3GATMA1

MOSFET N-CH 100V 17A/100A TDSON

Infineon Technologies
2,050 -

RFQ

BSC046N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Ta), 100A (Tc) 6V, 10V 4.6mOhm @ 50A, 10V 3.5V @ 120µA 63 nC @ 10 V ±20V 4500 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA65R099C6XKSA1

IPA65R099C6XKSA1

MOSFET N-CH 650V 38A TO220

Infineon Technologies
157 -

RFQ

IPA65R099C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS123NH6327XTSA1

BSS123NH6327XTSA1

MOSFET N-CH 100V 190MA SOT23-3

Infineon Technologies
355,519 -

RFQ

BSS123NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 1.8V @ 13µA 0.9 nC @ 10 V ±20V 20.9 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPAN60R280P7SXKSA1

IPAN60R280P7SXKSA1

MOSFET N-CH 650V 12A TO220

Infineon Technologies
3,893 -

RFQ

IPAN60R280P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC120N12LSGATMA1

BSC120N12LSGATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,403 -

RFQ

BSC120N12LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Ta), 68A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 2.4V @ 72µA 51 nC @ 10 V ±20V 4900 pF @ 60 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IQE050N08NM5ATMA1

IQE050N08NM5ATMA1

TRENCH 40<-<100V PG-TSON-8

Infineon Technologies
2,540 -

RFQ

IQE050N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

Infineon Technologies
3,981 -

RFQ

IQE050N08NM5CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IPB60R299CP

IPB60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,546 -

RFQ

IPB60R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP80R1K2P7XKSA1

IPP80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220-3

Infineon Technologies
2,011 -

RFQ

IPP80R1K2P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R099C6ATMA1

IPB65R099C6ATMA1

MOSFET N-CH 650V 38A D2PAK

Infineon Technologies
3,609 -

RFQ

IPB65R099C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB90R340C3ATMA1

IPB90R340C3ATMA1

MOSFET N-CH 900V 15A D2PAK

Infineon Technologies
3,896 -

RFQ

IPB90R340C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1

MOSFET N-CH 650V 2.8A TO252-3

Infineon Technologies
2,651 -

RFQ

IPD65R1K4CFDBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Tc) 10V 1.4Ohm @ 1A, 10V 4.5V @ 100µA 10 nC @ 10 V ±20V 262 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R250C6XTMA1

IPD65R250C6XTMA1

MOSFET N-CH 650V 16.1A TO252-3

Infineon Technologies
3,566 -

RFQ

IPD65R250C6XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 16.1A (Tc) 10V 250mOhm @ 4.4A, 10V 3.5V @ 400µA 44 nC @ 10 V ±20V 950 pF @ 100 V - 208.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

MOSFET N-CH 650V 3.9A TO252-3

Infineon Technologies
3,876 -

RFQ

IPD65R950CFDBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.9A (Tc) 10V 950mOhm @ 1.5A, 10V 4.5V @ 200µA 14.1 nC @ 10 V ±20V 380 pF @ 100 V - 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI65R099C6XKSA1

IPI65R099C6XKSA1

MOSFET N-CH 650V 38A TO262-3

Infineon Technologies
8,915 -

RFQ

IPI65R099C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R150CFDXKSA1

IPI65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO262-3

Infineon Technologies
459 -

RFQ

IPI65R150CFDXKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R074C6XKSA1

IPP60R074C6XKSA1

MOSFET N-CH 600V 57.7A TO220-3

Infineon Technologies
2,683 -

RFQ

IPP60R074C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 57.7A (Tc) 10V 74mOhm @ 21A, 10V 3.5V @ 1.4mA 138 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R1K4C6XKSA1

IPP60R1K4C6XKSA1

MOSFET N-CH 600V 3.2A TO220-3

Infineon Technologies
19,186 -

RFQ

IPP60R1K4C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 1.1 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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