Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ISC009N06LM5ATMA1

ISC009N06LM5ATMA1

MOSFET N-CH 60V 41A/348A TSON-8

Infineon Technologies
2,590 -

RFQ

ISC009N06LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 41A (Ta), 348A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 147µA 209 nC @ 10 V ±20V 13000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT030N12N3GATMA1

IPT030N12N3GATMA1

TRENCH >=100V

Infineon Technologies
2,016 -

RFQ

IPT030N12N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 24A (Ta), 237A (Tc) 10V 3mOhm @ 100A, 10V 4V @ 270µA 198 nC @ 10 V ±20V 13000 pF @ 60 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R310CFDXKSA1

IPA65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO220

Infineon Technologies
3,926 -

RFQ

IPA65R310CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC120N03LSGATMA1

BSC120N03LSGATMA1

MOSFET N-CH 30V 12A/39A TDSON

Infineon Technologies
9,075 -

RFQ

BSC120N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 39A (Tc) 4.5V, 10V 12mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1200 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLMS2002TRPBF

IRLMS2002TRPBF

MOSFET N-CH 20V 6.5A MICRO6

Infineon Technologies
87,005 -

RFQ

IRLMS2002TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8714TRPBF

IRF8714TRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,760 -

RFQ

IRF8714TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8736TRPBF

IRF8736TRPBF

MOSFET N-CH 30V 18A 8SO

Infineon Technologies
50,921 -

RFQ

IRF8736TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.8mOhm @ 18A, 10V 2.35V @ 50µA 26 nC @ 4.5 V ±20V 2315 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL014NTRPBF

IRLL014NTRPBF

MOSFET N-CH 55V 2A SOT223

Infineon Technologies
92,701 -

RFQ

IRLL014NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) 4V, 10V 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8721TRPBF

IRF8721TRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,207 -

RFQ

IRF8721TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFHS9301TRPBF

IRFHS9301TRPBF

MOSFET P-CH 30V 6A/13A 6PQFN

Infineon Technologies
11,980 -

RFQ

IRFHS9301TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta), 13A (Tc) 4.5V, 10V 37mOhm @ 7.8A, 10V 2.4V @ 25µA 13 nC @ 10 V ±20V 580 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL024ZTRPBF

IRFL024ZTRPBF

MOSFET N-CH 55V 5.1A SOT223

Infineon Technologies
42,585 -

RFQ

IRFL024ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 5.1A (Ta) 10V 57.5mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL4310TRPBF

IRFL4310TRPBF

MOSFET N-CH 100V 1.6A SOT223

Infineon Technologies
89,506 -

RFQ

IRFL4310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Ta) 10V 200mOhm @ 1.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7205TRPBF

IRF7205TRPBF

MOSFET P-CH 30V 4.6A 8SO

Infineon Technologies
71,961 -

RFQ

IRF7205TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 70mOhm @ 4.6A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 870 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR2705TRPBF

IRLR2705TRPBF

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
4,637 -

RFQ

IRLR2705TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR120NTRPBF

IRFR120NTRPBF

MOSFET N-CH 100V 9.4A DPAK

Infineon Technologies
75,213 -

RFQ

IRFR120NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFHM9391TRPBF

IRFHM9391TRPBF

MOSFET P-CH 30V 11A 8PQFN

Infineon Technologies
3,888 -

RFQ

IRFHM9391TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 14.6mOhm @ 11A, 10V 2.4V @ 25µA 16 nC @ 10 V ±25V 1543 pF @ 25 V - 2.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFHM8330TRPBF

IRFHM8330TRPBF

MOSFET N-CH 30V 16A 8PQFN

Infineon Technologies
3,132 -

RFQ

IRFHM8330TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.6mOhm @ 20A, 10V 2.35V @ 25µA 20 nC @ 10 V ±20V 1450 pF @ 25 V - 2.7W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM8334TRPBF

IRFHM8334TRPBF

MOSFET N-CH 30V 13A 8PQFN

Infineon Technologies
3,996 -

RFQ

IRFHM8334TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V ±20V 1180 pF @ 10 V - 2.7W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM8228TRPBF

IRFHM8228TRPBF

MOSFET N-CH 25V 19A 8PQFN

Infineon Technologies
2,585 -

RFQ

IRFHM8228TRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta) 4.5V, 10V 5.2mOhm @ 20A, 10V 2.35V @ 25µA 18 nC @ 10 V ±20V 1667 pF @ 10 V - 2.8W (Ta), 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP50R399CPXKSA1

IPP50R399CPXKSA1

MOSFET N-CH 500V 9A TO220-3

Infineon Technologies
3,848 -

RFQ

IPP50R399CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Ta) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 4 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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