Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4435DYTRPBF

SI4435DYTRPBF

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
32,555 -

RFQ

SI4435DYTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC059N04LSGATMA1

BSC059N04LSGATMA1

MOSFET N-CH 40V 16A/73A TDSON

Infineon Technologies
192,995 -

RFQ

BSC059N04LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 73A (Tc) 4.5V, 10V 5.9mOhm @ 50A, 10V 2V @ 23µA 40 nC @ 10 V ±20V 3200 pF @ 20 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLHM630TRPBF

IRLHM630TRPBF

MOSFET N-CH 30V 21A/40A PQFN

Infineon Technologies
2,628 -

RFQ

IRLHM630TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) 2.5V, 10V 3.5mOhm @ 20A, 4.5V 1.1V @ 50µA 62 nC @ 4.5 V ±12V 3170 pF @ 25 V - 2.7W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
36,776 -

RFQ

IPD30N03S4L09ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 13µA 20 nC @ 10 V ±16V 1520 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3410TRPBF

IRFR3410TRPBF

MOSFET N-CH 100V 31A DPAK

Infineon Technologies
44,204 -

RFQ

IRFR3410TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL65R130CFD7AUMA1

IPL65R130CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies
2,047 -

RFQ

IPL65R130CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 130mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB720P15LMATMA1

IPB720P15LMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies
2,918 -

RFQ

IPB720P15LMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 150 V 4.6A (Ta), 41A (Tc) 4.5V, 10V 72mOhm @ 37A, 10V 2V @ 5.55mA 224 nC @ 10 V ±20V 11000 pF @ 75 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R110CFD7ATMA1

IPB65R110CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
3,529 -

RFQ

IPB65R110CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6718L2TRPBF

IRF6718L2TRPBF

MOSFET N-CH 25V 61A DIRECTFET

Infineon Technologies
2,704 -

RFQ

IRF6718L2TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 61A (Ta), 270A (Tc) 4.5V, 10V 0.7mOhm @ 61A, 10V 2.35V @ 150µA 96 nC @ 4.5 V ±20V 6500 pF @ 13 V - 4.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6729MTRPBF

IRF6729MTRPBF

MOSFET N-CH 30V 31A DIRECTFET

Infineon Technologies
2,782 -

RFQ

IRF6729MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 63 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7665S2TRPBF

IRF7665S2TRPBF

MOSFET N-CH 100V 4.1A DIRECTFET

Infineon Technologies
3,798 -

RFQ

IRF7665S2TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.1A (Ta), 14.4A (Tc) 10V 62mOhm @ 8.9A, 10V 5V @ 25µA 13 nC @ 10 V ±20V 515 pF @ 25 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT063N15N5ATMA1

IPT063N15N5ATMA1

TRENCH >=100V PG-HSOF-8

Infineon Technologies
2,754 -

RFQ

IPT063N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 153µA 59 nC @ 10 V ±20V 4550 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies
2,368 -

RFQ

IPL65R115CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 144W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IST015N06NM5AUMA1

IST015N06NM5AUMA1

OPTIMOS 5 POWER MOSFET 60 V

Infineon Technologies
3,627 -

RFQ

IST015N06NM5AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 242A (Tc) 6V, 10V 1.5mOhm @ 50A, 10V 3.3V @ 95µA 89 nC @ 10 V ±20V 5200 pF @ 30 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT054N15N5ATMA1

IPT054N15N5ATMA1

TRENCH >=100V PG-HSOF-8

Infineon Technologies
2,272 -

RFQ

IPT054N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 143A (Tc) 8V, 10V 5.4mOhm @ 50A, 10V 4.6V @ 181µA 69 nC @ 10 V ±20V 5300 pF @ 75 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC052N03LSATMA1

BSC052N03LSATMA1

MOSFET N-CH 30V 17A/57A TDSON

Infineon Technologies
132,286 -

RFQ

BSC052N03LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 57A (Tc) 4.5V, 10V 5.2mOhm @ 30A, 10V 2V @ 250µA 12 nC @ 10 V ±20V 770 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7490TRPBF

IRF7490TRPBF

MOSFET N-CH 100V 5.4A 8SO

Infineon Technologies
49,226 -

RFQ

IRF7490TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.4A (Ta) 10V 39mOhm @ 3.2A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1720 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8734TRPBF

IRF8734TRPBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
11,296 -

RFQ

IRF8734TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.5mOhm @ 21A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3175 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR3410TRLPBF

IRLR3410TRLPBF

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
26,718 -

RFQ

IRLR3410TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3410TRPBF

IRLR3410TRPBF

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
18,548 -

RFQ

IRLR3410TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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