Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR2905TRLPBF

IRLR2905TRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,995 -

RFQ

IRLR2905TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R400CEAUMA1

IPD60R400CEAUMA1

MOSFET N-CH 600V 14.7A TO252

Infineon Technologies
7,429 -

RFQ

IPD60R400CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 14.7A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 112W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR3504ZTRPBF

IRFR3504ZTRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
7,922 -

RFQ

IRFR3504ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD036N04LGATMA1

IPD036N04LGATMA1

MOSFET N-CH 40V 90A TO252-31

Infineon Technologies
23,414 -

RFQ

IPD036N04LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 3.6mOhm @ 90A, 10V 2V @ 45µA 78 nC @ 10 V ±20V 6300 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW80R290C3A

IPW80R290C3A

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies
3,507 -

RFQ

IPW80R290C3A

Ficha técnica

Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 117 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLR2908TRPBF

IRLR2908TRPBF

MOSFET N-CH 80V 30A DPAK

Infineon Technologies
40,592 -

RFQ

IRLR2908TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R190CFD7XKSA1

IPP65R190CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,017 -

RFQ

IPP65R190CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP04N60C3XKSA1

SPP04N60C3XKSA1

MOSFET N-CH 600V 4.5A TO220-3

Infineon Technologies
1,000 -

RFQ

SPP04N60C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP7537PBF

IRFP7537PBF

MOSFET N-CH 60V 172A TO247

Infineon Technologies
2,152 -

RFQ

IRFP7537PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 172A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA50R140CPXK

IPA50R140CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,547 -

RFQ

IPA50R140CPXK

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFS7530-7PPBF

IRFS7530-7PPBF

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
3,893 -

RFQ

IRFS7530-7PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.7V @ 250µA 354 nC @ 10 V ±20V 12960 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7530PBF

IRFS7530PBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,458 -

RFQ

IRFS7530PBF

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534-7PPBF

IRFS7534-7PPBF

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
2,608 -

RFQ

IRFS7534-7PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.7V @ 250µA 300 nC @ 10 V ±20V 9990 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534PBF

IRFS7534PBF

MOSFET N CH 60V 195A D2PAK

Infineon Technologies
3,667 -

RFQ

IRFS7534PBF

Ficha técnica

Tube,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7537PBF

IRFS7537PBF

MOSFET N CH 60V 173A D2PAK

Infineon Technologies
2,512 -

RFQ

IRFS7537PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7540PBF

IRFS7540PBF

MOSFET N CH 60V 110A D2PAK

Infineon Technologies
3,557 -

RFQ

IRFS7540PBF

Ficha técnica

Tube,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT014N08NM5ATMA1

IPT014N08NM5ATMA1

MOSFET N-CH 80V 37A/331A HSOF-8

Infineon Technologies
2,921 -

RFQ

IPT014N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 331A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 200 nC @ 10 V ±20V 14000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMBG65R260M1HXTMA1

IMBG65R260M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
1,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
BSC018NE2LSATMA1

BSC018NE2LSATMA1

MOSFET N-CH 25V 29A/100A TDSON

Infineon Technologies
10,000 -

RFQ

BSC018NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 100A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2800 pF @ 12 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R380E6XKSA1

IPA60R380E6XKSA1

MOSFET N-CH 600V 10.6A TO220-FP

Infineon Technologies
500 -

RFQ

IPA60R380E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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