Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3636TRPBF

IRLR3636TRPBF

MOSFET N-CH 60V 50A DPAK

Infineon Technologies
11,321 -

RFQ

IRLR3636TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34NPBF

IRF9Z34NPBF

MOSFET P-CH 55V 19A TO220AB

Infineon Technologies
77,078 -

RFQ

IRF9Z34NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9530NPBF

IRF9530NPBF

MOSFET P-CH 100V 14A TO220AB

Infineon Technologies
15,741 -

RFQ

IRF9530NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC011N03LSATMA1

BSC011N03LSATMA1

MOSFET N-CH 30V 37A/100A TDSON

Infineon Technologies
2,420 -

RFQ

BSC011N03LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.2V @ 250µA 72 nC @ 10 V ±20V 4700 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC019N04LSATMA1

BSC019N04LSATMA1

MOSFET N-CH 40V 27A/100A TDSON

Infineon Technologies
35,305 -

RFQ

BSC019N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 250µA 41 nC @ 10 V ±20V 2900 pF @ 20 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR3110ZTRLPBF

IRLR3110ZTRLPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
11,989 -

RFQ

IRLR3110ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD042P03L3GATMA1

IPD042P03L3GATMA1

MOSFET P-CH 30V 70A TO252-3

Infineon Technologies
4,491 -

RFQ

IPD042P03L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 70A, 10V 2V @ 270µA 175 nC @ 10 V ±20V 12400 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7545PBF

IRFB7545PBF

MOSFET N-CH 60V 95A TO220

Infineon Technologies
72,814 -

RFQ

IRFB7545PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 95A (Tc) 6V, 10V 5.9mOhm @ 57A, 10V 3.7V @ 100µA 110 nC @ 10 V ±20V 4010 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF530NPBF

IRF530NPBF

MOSFET N-CH 100V 17A TO220AB

Infineon Technologies
16,965 -

RFQ

IRF530NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH5006TRPBF

IRFH5006TRPBF

MOSFET N-CH 60V 21A/100A 8PQFN

Infineon Technologies
10,724 -

RFQ

IRFH5006TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 100A (Tc) 10V 4.1mOhm @ 50A, 10V 4V @ 150µA 100 nC @ 10 V ±20V 4175 pF @ 30 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380C6ATMA1

IPD60R380C6ATMA1

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
51,071 -

RFQ

IPD60R380C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ014NE2LS5IFATMA1

BSZ014NE2LS5IFATMA1

MOSFET N-CH 25V 31A/40A TSDSON

Infineon Technologies
17,466 -

RFQ

BSZ014NE2LS5IFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 31A (Ta), 40A (Tc) 4.5V, 10V 1.45mOhm @ 20A, 10V 2V @ 250µA 33 nC @ 10 V ±16V 2300 pF @ 12 V Schottky Diode (Body) 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3710STRLPBF

IRF3710STRLPBF

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
16,633 -

RFQ

IRF3710STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1

MOSFET N-CH 80V 95A TDSON

Infineon Technologies
19,735 -

RFQ

BSC052N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 6V, 10V 5.2mOhm @ 47.5A, 10V 3.8V @ 49µA 40 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF640NPBF

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies
78,692 -

RFQ

IRF640NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710ZSTRLPBF

IRF3710ZSTRLPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
4,289 -

RFQ

IRF3710ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6648TRPBF

IRF6648TRPBF

MOSFET N-CH 60V 86A DIRECTFET MN

Infineon Technologies
2,380 -

RFQ

IRF6648TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 10V 7mOhm @ 17A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2120 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF540NPBF

IRF540NPBF

MOSFET N-CH 100V 33A TO220AB

Infineon Technologies
98,583 -

RFQ

IRF540NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540NSTRLPBF

IRL540NSTRLPBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
63,884 -

RFQ

IRL540NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R450P7ATMA1

IPD80R450P7ATMA1

MOSFET N-CH 800V 11A TO252

Infineon Technologies
27,362 -

RFQ

IPD80R450P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 4.5A, 10V 3.5V @ 220µA 24 nC @ 10 V ±20V 770 pF @ 500 V Super Junction 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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