Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRF8736M2TR

AUIRF8736M2TR

MOSFET N-CH 40V 27A DIRECTFET

Infineon Technologies
13,601 -

RFQ

AUIRF8736M2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 137A (Tc) 10V 1.9mOhm @ 85A, 10V 3.9V @ 150µA 204 nC @ 10 V ±20V 6867 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3206PBF

IRFB3206PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
8,820 -

RFQ

IRFB3206PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4905PBF

IRF4905PBF

MOSFET P-CH 55V 74A TO220AB

Infineon Technologies
91,681 -

RFQ

IRF4905PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4321TRLPBF

IRFS4321TRLPBF

MOSFET N-CH 150V 85A D2PAK

Infineon Technologies
9,249 -

RFQ

IRFS4321TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3207TRLPBF

IRFS3207TRLPBF

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies
1,480 -

RFQ

IRFS3207TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2505PBF

IRL2505PBF

MOSFET N-CH 55V 104A TO220AB

Infineon Technologies
11,333 -

RFQ

IRL2505PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5210PBF

IRF5210PBF

MOSFET P-CH 100V 40A TO220AB

Infineon Technologies
27,227 -

RFQ

IRF5210PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS3036TRL7PP

IRLS3036TRL7PP

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
4,218 -

RFQ

IRLS3036TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP250NPBF

IRFP250NPBF

MOSFET N-CH 200V 30A TO247AC

Infineon Technologies
10,519 -

RFQ

IRFP250NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 75mOhm @ 18A, 10V 4V @ 250µA 123 nC @ 10 V ±20V 2159 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFN8403TR

AUIRFN8403TR

MOSFET N-CH 40V 95A 8PQFN

Infineon Technologies
3,584 -

RFQ

AUIRFN8403TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 4.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR7540PBF

IRFR7540PBF

MOSFET N-CH 60V 90A DPAK

Infineon Technologies
3,643 -

RFQ

IRFR7540PBF

Ficha técnica

Tube,Tube StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7430-7PPBF

IRFS7430-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,777 -

RFQ

IRFS7430-7PPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434PBF

IRFS7434PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,959 -

RFQ

IRFS7434PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

MOSFET N-CH 800V 3.9A TO251-3

Infineon Technologies
20,500 -

RFQ

IPU80R1K4CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL40SC228

IRL40SC228

MOSFET N-CH 40V 557A D2PAK

Infineon Technologies
2,615 -

RFQ

IRL40SC228

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 557A (Tc) 4.5V, 10V 0.65mOhm @ 100A, 10V 2.4V @ 250µA 307 nC @ 4.5 V ±20V 19680 pF @ 25 V - 416W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405PBF

IRF1405PBF

MOSFET N-CH 55V 169A TO220AB

Infineon Technologies
21,847 -

RFQ

IRF1405PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 169A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP260MPBF

IRFP260MPBF

MOSFET N-CH 200V 50A TO247AC

Infineon Technologies
6,541 -

RFQ

IRFP260MPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 28A, 10V 4V @ 250µA 234 nC @ 10 V ±20V 4057 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA08N80C3XKSA1

SPA08N80C3XKSA1

MOSFET N-CH 800V 8A TO220-FP

Infineon Technologies
2,990 -

RFQ

SPA08N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 60 nC @ 10 V ±20V 1100 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP037N08N3GXKSA1

IPP037N08N3GXKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies
2,032 -

RFQ

IPP037N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU80R2K8CEBKMA1

IPU80R2K8CEBKMA1

MOSFET N-CH 800V 1.9A TO251-3

Infineon Technologies
2,462 -

RFQ

IPU80R2K8CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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