Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFI540NPBF

IRFI540NPBF

MOSFET N-CH 100V 20A TO220AB FP

Infineon Technologies
1,795 -

RFQ

IRFI540NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 52mOhm @ 11A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 1400 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410ZPBF

IRFB4410ZPBF

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies
3,841 -

RFQ

IRFB4410ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB039N10N3GATMA1

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies
11,276 -

RFQ

IPB039N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC016N06NSTATMA1

BSC016N06NSTATMA1

MOSFET N-CH 60V 31A/100A TDSON

Infineon Technologies
2,230 -

RFQ

BSC016N06NSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 100A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 3.3V @ 95µA 95 nC @ 10 V ±20V 6500 pF @ 30 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434TRLPBF

IRFS7434TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
1,589 -

RFQ

IRFS7434TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410ZTRLPBF

IRFS4410ZTRLPBF

MOSFET N-CH 100V 97A D2PAK

Infineon Technologies
9,623 -

RFQ

IRFS4410ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4020PBF

IRFB4020PBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies
9,953 -

RFQ

IRFB4020PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 100mOhm @ 11A, 10V 4.9V @ 100µA 29 nC @ 10 V ±20V 1200 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD80R280P7ATMA1

IPD80R280P7ATMA1

MOSFET N-CH 800V 17A TO252

Infineon Technologies
10,258 -

RFQ

IPD80R280P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V Super Junction 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R299CPAATMA1

IPB60R299CPAATMA1

MOSFET N-CH 600V 11A TO263-3

Infineon Technologies
1,979 -

RFQ

IPB60R299CPAATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP250MPBF

IRFP250MPBF

MOSFET N-CH 200V 30A TO247AC

Infineon Technologies
22,378 -

RFQ

IRFP250MPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 75mOhm @ 18A, 10V 4V @ 250µA 123 nC @ 10 V ±20V 2159 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR7546PBF

IRFR7546PBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
2,875 -

RFQ

IRFR7546PBF

Ficha técnica

Bulk,Tube StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP16N50C3XKSA1

SPP16N50C3XKSA1

MOSFET N-CH 560V 16A TO220-3

Infineon Technologies
2,548 -

RFQ

SPP16N50C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS7430PBF

IRFS7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,638 -

RFQ

IRFS7430PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB320N20N3GATMA1

IPB320N20N3GATMA1

MOSFET N-CH 200V 34A D2PAK

Infineon Technologies
12,210 -

RFQ

IPB320N20N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2910STRLPBF

IRL2910STRLPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies
2,965 -

RFQ

IRL2910STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415PBF

IRF3415PBF

MOSFET N-CH 150V 43A TO220AB

Infineon Technologies
11,254 -

RFQ

IRF3415PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP150NPBF

IRFP150NPBF

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies
15,206 -

RFQ

IRFP150NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB035N08N3GATMA1

IPB035N08N3GATMA1

MOSFET N-CH 80V 100A D2PAK

Infineon Technologies
2,668 -

RFQ

IPB035N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC040N10NS5SCATMA1

BSC040N10NS5SCATMA1

MOSFET N-CH 100V 140A WSON-8

Infineon Technologies
10,642 -

RFQ

BSC040N10NS5SCATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 95µA 72 nC @ 10 V ±20V 5300 pF @ 50 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

MOSFET N-CH 100V 9A/83A 2WDSON

Infineon Technologies
27,102 -

RFQ

BSB056N10NN3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 83A (Tc) 6V, 10V 5.6mOhm @ 30A, 10V 3.5V @ 100µA 74 nC @ 10 V ±20V 5500 pF @ 50 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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