Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ46NPBF

IRFZ46NPBF

MOSFET N-CH 55V 53A TO220AB

Infineon Technologies
14,769 -

RFQ

IRFZ46NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD70N10S312ATMA1

IPD70N10S312ATMA1

MOSFET N-CH 100V 70A TO252-3

Infineon Technologies
14,510 -

RFQ

IPD70N10S312ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.1mOhm @ 70A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1310NSTRLPBF

IRF1310NSTRLPBF

MOSFET N-CH 100V 42A D2PAK

Infineon Technologies
26,957 -

RFQ

IRF1310NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 3.8W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC027N06LS5ATMA1

BSC027N06LS5ATMA1

MOSFET N-CH 60V 100A TDSON

Infineon Technologies
15,808 -

RFQ

BSC027N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V 2.3V @ 49µA 30 nC @ 4.5 V ±20V 4400 pF @ 30 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7946TRPBF

IRF7946TRPBF

MOSFET N-CH 40V 90A DIRECTFET MX

Infineon Technologies
30,667 -

RFQ

IRF7946TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 1.4mOhm @ 90A, 10V 3.9V @ 150µA 212 nC @ 10 V ±20V 6852 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC019N06NSATMA1

BSC019N06NSATMA1

MOSFET N-CH 60V 100A TDSON-8 FL

Infineon Technologies
4,759 -

RFQ

BSC019N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 6V, 10V 1.95mOhm @ 50A, 10V 3.3V @ 74µA 77 nC @ 10 V ±20V 5250 pF @ 30 V - 136W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44NPBF

IRLZ44NPBF

MOSFET N-CH 55V 47A TO220AB

Infineon Technologies
54,179 -

RFQ

IRLZ44NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC028N06NSTATMA1

BSC028N06NSTATMA1

MOSFET N-CH 60V 24A/100A TDSON

Infineon Technologies
7,543 -

RFQ

BSC028N06NSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.8mOhm @ 50A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3375 pF @ 30 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NPBF

IRF9540NPBF

MOSFET P-CH 100V 23A TO220AB

Infineon Technologies
20,840 -

RFQ

IRF9540NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44NPBF

IRFZ44NPBF

MOSFET N-CH 55V 49A TO220AB

Infineon Technologies
17,626 -

RFQ

IRFZ44NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5305PBF

IRF5305PBF

MOSFET P-CH 55V 31A TO220AB

Infineon Technologies
30,726 -

RFQ

IRF5305PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD031N06L3GATMA1

IPD031N06L3GATMA1

MOSFET N-CH 60V 100A TO252-3

Infineon Technologies
8,635 -

RFQ

IPD031N06L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.1mOhm @ 100A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R360P7SXKSA1

IPA60R360P7SXKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies
31,752 -

RFQ

IPA60R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFS4620TRLPBF

IRFS4620TRLPBF

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies
11,313 -

RFQ

IRFS4620TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6644TRPBF

IRF6644TRPBF

MOSFET N-CH 100V 10.3A DIRECTFET

Infineon Technologies
31,536 -

RFQ

IRF6644TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Ta), 60A (Tc) 10V 13mOhm @ 10.3A, 10V 4.8V @ 150µA 47 nC @ 10 V ±20V 2210 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFS52N15DTRRP

IRFS52N15DTRRP

MOSFET N-CH 150V 51A D2PAK

Infineon Technologies
7,480 -

RFQ

IRFS52N15DTRRP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205PBF

IRF3205PBF

MOSFET N-CH 55V 110A TO220AB

Infineon Technologies
31,119 -

RFQ

IRF3205PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407STRLPBF

IRF1407STRLPBF

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
3,805 -

RFQ

IRF1407STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR5410TRL

AUIRFR5410TRL

MOSFET P-CH 100V 13A DPAK

Infineon Technologies
20,103 -

RFQ

AUIRFR5410TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2805STRLPBF

IRF2805STRLPBF

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies
4,501 -

RFQ

IRF2805STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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