Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS4115-7P

AUIRFS4115-7P

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies
3,219 -

RFQ

AUIRFS4115-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies
2,834 -

RFQ

AUIRFS4115-7TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD122N10N3GATMA1

IPD122N10N3GATMA1

MOSFET N-CH 100V 59A TO252-3

Infineon Technologies
4,140 -

RFQ

IPD122N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 6V, 10V 12.2mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1

MOSFET N-CH 80V 49A TDSON

Infineon Technologies
67,225 -

RFQ

BSC117N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 49A (Tc) 6V, 10V 11.7mOhm @ 25A, 10V 3.8V @ 22µA 18 nC @ 10 V ±20V 1300 pF @ 40 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7470TRPBF

IRF7470TRPBF

MOSFET N-CH 40V 10A 8SO

Infineon Technologies
28,525 -

RFQ

IRF7470TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 44 nC @ 4.5 V ±12V 3430 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR1018ETRPBF

IRFR1018ETRPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
18,092 -

RFQ

IRFR1018ETRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530NSTRLPBF

IRF530NSTRLPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
20,822 -

RFQ

IRF530NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7832TRPBF

IRF7832TRPBF

MOSFET N-CH 30V 20A 8SO

Infineon Technologies
3,876 -

RFQ

IRF7832TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
BSZ075N08NS5ATMA1

BSZ075N08NS5ATMA1

MOSFET N-CH 80V 40A 8TSDSON

Infineon Technologies
3,486 -

RFQ

BSZ075N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 7.5mOhm @ 20A, 10V 3.8V @ 36µA 29.5 nC @ 10 V ±20V 2080 pF @ 40 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ024N04LS6ATMA1

BSZ024N04LS6ATMA1

MOSFET N-CH 40V 24A/40A TSDSON

Infineon Technologies
8,002 -

RFQ

BSZ024N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 40A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 2.5W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NSTRLPBF

IRL530NSTRLPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
28,767 -

RFQ

IRL530NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC190N12NS3GATMA1

BSC190N12NS3GATMA1

MOSFET N-CH 120V 8.6A/44A TDSON

Infineon Technologies
19,648 -

RFQ

BSC190N12NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 8.6A (Ta), 44A (Tc) 10V 19mOhm @ 39A, 10V 4V @ 42µA 34 nC @ 10 V ±20V 2300 pF @ 60 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPTC014N08NM5ATMA1

IPTC014N08NM5ATMA1

MOSFET N-CH 80V 37A/330A HDSOP

Infineon Technologies
3,677 -

RFQ

IPTC014N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 330A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 180 nC @ 10 V ±20V 13000 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL6283MTRPBF

IRL6283MTRPBF

MOSFET N-CH 20V 38A DIRECTFET

Infineon Technologies
3,650 -

RFQ

IRL6283MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1018ESTRLPBF

IRF1018ESTRLPBF

MOSFET N-CH 60V 79A D2PAK

Infineon Technologies
10,956 -

RFQ

IRF1018ESTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC014N04LSATMA1

BSC014N04LSATMA1

MOSFET N-CH 40V 32/100A SUPERSO8

Infineon Technologies
42,584 -

RFQ

BSC014N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 32A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 61 nC @ 10 V ±20V 4300 pF @ 20 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R180P7SAUMA1

IPD60R180P7SAUMA1

MOSFET N-CH 600V 18A TO252-3

Infineon Technologies
7,153 -

RFQ

IPD60R180P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF540NSTRLPBF

IRF540NSTRLPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
1,172 -

RFQ

IRF540NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3607TRLPBF

IRFS3607TRLPBF

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
8,973 -

RFQ

IRFS3607TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4510TRPBF

IRFR4510TRPBF

MOSFET N CH 100V 56A DPAK

Infineon Technologies
25,996 -

RFQ

IRFR4510TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 267268269270271272273274...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário