Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251

Infineon Technologies
2,233 -

RFQ

IPS65R1K5CEAKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.1A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPL65R095CFD7AUMA1

IPL65R095CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies
2,942 -

RFQ

IPL65R095CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 95mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPW65R230CFD7AXKSA1

IPW65R230CFD7AXKSA1

650V COOLMOS CFD7A SJ POWER DEVI

Infineon Technologies
2,688 -

RFQ

IPW65R230CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R120P7XKSA1

IPA60R120P7XKSA1

MOSFET N-CH 600V 26A TO220

Infineon Technologies
490 -

RFQ

IPA60R120P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT008N06NM5LFATMA1

IPT008N06NM5LFATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies
2,837 -

RFQ

IPT008N06NM5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 454A (Tc) 10V 0.8mOhm @ 150A, 10V 3.6V @ 250µA 185 nC @ 10 V ±20V 980 pF @ 30 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPTG007N06NM5ATMA1

IPTG007N06NM5ATMA1

MOSFET N-CH 60V 53A/454A HSOG-8

Infineon Technologies
3,820 -

RFQ

IPTG007N06NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 53A (Ta), 454A (Tc) 6V, 10V 0.75mOhm @ 150A, 10V 3.3V @ 280µA 261 nC @ 10 V ±20V 21000 pF @ 30 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R104C7AUMA1

IPL60R104C7AUMA1

MOSFET N-CH 600V 20A 4VSON

Infineon Technologies
3,728 -

RFQ

IPL60R104C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 104mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 122W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R2K1CEBTMA1

IPD60R2K1CEBTMA1

MOSFET N-CH 600V 2.3A TO252-3

Infineon Technologies
2,951 -

RFQ

IPD60R2K1CEBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA50R650CEXKSA2

IPA50R650CEXKSA2

MOSFET N-CH 500V 4.6A TO220

Infineon Technologies
48,571 -

RFQ

IPA50R650CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 27.2W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R460CEXKSA1

IPA60R460CEXKSA1

MOSFET N-CH 600V 9.1A TO220-FP

Infineon Technologies
2,054 -

RFQ

IPA60R460CEXKSA1

Ficha técnica

Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.1A (Tc) 10V 460mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 30W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R800CEXKSA1

IPA60R800CEXKSA1

MOSFET N-CH 600V 5.6A TO220-FP

Infineon Technologies
3,418 -

RFQ

IPA60R800CEXKSA1

Ficha técnica

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.6A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 27W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

MOSFET N-CH 800V 2.8A TO220

Infineon Technologies
734 -

RFQ

IPA80R1K4CEXKSA1

Ficha técnica

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R460CEXKSA1

IPA80R460CEXKSA1

MOSFET N-CH 800V 5A TO220

Infineon Technologies
2,929 -

RFQ

IPA80R460CEXKSA1

Ficha técnica

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 460mOhm @ 7.1A, 10V 3.9V @ 680µA 64 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R650CEXKSA1

IPA80R650CEXKSA1

MOSFET N-CH 800V 4.5A TO220

Infineon Technologies
2,391 -

RFQ

IPA80R650CEXKSA1

Ficha técnica

Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 45 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS65R1K0CEAKMA1

IPS65R1K0CEAKMA1

MOSFET N-CH 650V 4.3A TO251

Infineon Technologies
1,878 -

RFQ

IPS65R1K0CEAKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R1K0CEBKMA1

IPU60R1K0CEBKMA1

MOSFET N-CH 600V 4.3A TO251

Infineon Technologies
3,168 -

RFQ

IPU60R1K0CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R1K5CEBKMA1

IPU60R1K5CEBKMA1

MOSFET N-CH 600V 3.1A TO251

Infineon Technologies
2,666 -

RFQ

IPU60R1K5CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU60R2K1CEBKMA1

IPU60R2K1CEBKMA1

MOSFET N-CH 600V 2.3A TO251-3

Infineon Technologies
460,586 -

RFQ

IPU60R2K1CEBKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD60R1K0CEATMA1

IPD60R1K0CEATMA1

MOSFET N-CH 600V 4.3A TO252-3

Infineon Technologies
3,826 -

RFQ

IPD60R1K0CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R400CEATMA1

IPD60R400CEATMA1

MOSFET N-CH 600V 10.3A TO252-3

Infineon Technologies
3,594 -

RFQ

IPD60R400CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.3A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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