Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD60R460CEATMA1

IPD60R460CEATMA1

MOSFET N-CH 600V 9.1A TO252-3

Infineon Technologies
2,559 -

RFQ

IPD60R460CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.1A (Tc) 10V 460mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R650CEATMA1

IPD60R650CEATMA1

MOSFET N-CH 600V 7A TO252-3

Infineon Technologies
2,013 -

RFQ

IPD60R650CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R800CEATMA1

IPD60R800CEATMA1

MOSFET N-CH 600V 5.6A TO252-3

Infineon Technologies
2,387 -

RFQ

IPD60R800CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.6A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPT044N15N5ATMA1

IPT044N15N5ATMA1

TRENCH >=100V PG-HSOF-8

Infineon Technologies
3,025 -

RFQ

IPT044N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 174A (Tc) 8V, 10V 4.4mOhm @ 50A, 10V 4.6V @ 221µA 84 nC @ 10 V ±20V 6500 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R190CFD7AAKSA1

IPP65R190CFD7AAKSA1

MOSFET N-CH 650V 14A TO220-3

Infineon Technologies
2,739 -

RFQ

IPP65R190CFD7AAKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Through Hole
IMBG65R163M1HXTMA1

IMBG65R163M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,048 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPW65R190CFDFKSA1

IPW65R190CFDFKSA1

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies
3,434 -

RFQ

IPW65R190CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190CFDFKSA2

IPW65R190CFDFKSA2

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies
3,510 -

RFQ

IPW65R190CFDFKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT039N15N5ATMA1

IPT039N15N5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies
3,249 -

RFQ

IPT039N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Ta), 190A (Tc) 8V, 10V 3.9mOhm @ 50A, 10V 4.6V @ 257µA 98 nC @ 10 V ±20V 7700 pF @ 75 V - 3.8W (Ta), 319W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP15N60C3XKSA1

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies
3,713 -

RFQ

SPP15N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT013N08NM5LFATMA1

IPT013N08NM5LFATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies
2,963 -

RFQ

IPT013N08NM5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 333A (Tc) 10V 1.3mOhm @ 150A, 10V 4.1V @ 250µA 158 nC @ 10 V ±20V 820 pF @ 40 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDD60R075CFD7XTMA1

IPDD60R075CFD7XTMA1

MOSFET N-CH 600V 40A HDSOP-10

Infineon Technologies
2,874 -

RFQ

IPDD60R075CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) - 75mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2102 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R199CPXKSA1

IPA60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-FP

Infineon Technologies
3,732 -

RFQ

IPA60R199CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT015N10N5ATMA1

IPT015N10N5ATMA1

MOSFET N-CH 100V 300A 8HSOF

Infineon Technologies
2,860 -

RFQ

IPT015N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 6V, 10V 1.5mOhm @ 150A, 10V 3.8V @ 250µA 211 nC @ 10 V ±20V 16000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW65R190CFD7AXKSA1

IPW65R190CFD7AXKSA1

MOSFET N-CH 650V 14A TO247-3

Infineon Technologies
2,941 -

RFQ

IPW65R190CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPDD60R080G7XTMA1

IPDD60R080G7XTMA1

MOSFET N-CH 600V 29A HDSOP-10

Infineon Technologies
3,383 -

RFQ

IPDD60R080G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 80mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1640 pF @ 400 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP4110PBFXKMA1

IRFP4110PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,347 -

RFQ

IRFP4110PBFXKMA1

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPTC015N10NM5ATMA1

IPTC015N10NM5ATMA1

MOSFET N-CH 100V 35A/354A HDSOP

Infineon Technologies
3,697 -

RFQ

IPTC015N10NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Ta), 354A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 275µA 208 nC @ 10 V ±20V 16000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPTG014N10NM5ATMA1

IPTG014N10NM5ATMA1

MOSFET N-CH 100V 37A/366A HSOG-8

Infineon Technologies
2,364 -

RFQ

IPTG014N10NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 37A (Ta), 366A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 211 nC @ 10 V ±20V 16000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW65R155CFD7XKSA1

IPW65R155CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,284 -

RFQ

IPW65R155CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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