Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP330P10NMAKSA1

IPP330P10NMAKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies
2,860 -

RFQ

IPP330P10NMAKSA1

Ficha técnica

Tube OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

SICFET N-CH 1.2KV 4.7A TO263

Infineon Technologies
3,447 -

RFQ

IMBG120R350M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) - 468mOhm @ 2A, 18V 5.7V @ 1mA 5.9 nC @ 18 V +18V, -15V 196 pF @ 800 V Standard 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPTG210N25NM3FDATMA1

IPTG210N25NM3FDATMA1

TRENCH >=100V PG-HSOG-8

Infineon Technologies
2,926 -

RFQ

IPTG210N25NM3FDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 250 V 7.7A (Ta), 77A (Tc) 10V 21mOhm @ 69A, 10V 4V @ 267µA 81 nC @ 10 V ±20V 7000 pF @ 125 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125P6XKSA1

IPP60R125P6XKSA1

MOSFET N-CH 600V 30A TO220-3

Infineon Technologies
2,671 -

RFQ

IPP60R125P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 11.6A, 10V 4.5V @ 960µA 56 nC @ 10 V ±20V 2660 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R107M1HXTMA1

IMBG65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,870 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPP65R110CFD7XKSA1

IPP65R110CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,484 -

RFQ

IPP65R110CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFB8409

AUIRFB8409

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
3,721 -

RFQ

AUIRFB8409

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPDQ60R065S7XTMA1

IPDQ60R065S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
2,206 -

RFQ

IPDQ60R065S7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 12V 65mOhm @ 8A, 12V 4.5V @ 490µA 51 nC @ 12 V ±20V 1932 pF @ 300 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R125CFD7XKSA1

IPW65R125CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
3,008 -

RFQ

IPW65R125CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 125mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R083M1HXTMA1

IMBG65R083M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,423 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IRFHM7194TRPBF

IRFHM7194TRPBF

MOSFET N-CH 100V 9.3A/34A 8PQFN

Infineon Technologies
2,590 -

RFQ

IRFHM7194TRPBF

Ficha técnica

Tape & Reel (TR) FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 34A (Tc) 10V 16.4mOhm @ 20A, 10V 3.6V @ 50µA 19 nC @ 10 V ±20V 733 pF @ 50 V - 2.8W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRLZ24NSTRL

AUIRLZ24NSTRL

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
2,855 -

RFQ

AUIRLZ24NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707ZSTRLPBF

IRF3707ZSTRLPBF

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,505 -

RFQ

IRF3707ZSTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET®, StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7184TRPBF

IRFH7184TRPBF

MOSFET N-CH 100V 20A/128A PQFN

Infineon Technologies
3,962 -

RFQ

IRFH7184TRPBF

Ficha técnica

Tape & Reel (TR) FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 128A (Tc) 10V 4.8mOhm @ 50A, 10V 3.6V @ 150µA 54 nC @ 10 V ±20V 2320 pF @ 50 V - 3.9W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7190TRPBF

IRFH7190TRPBF

MOSFET N-CH 100V 15A/82A PQFN

Infineon Technologies
2,295 -

RFQ

IRFH7190TRPBF

Ficha técnica

Tape & Reel (TR) FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 82A (Tc) 10V 7.5mOhm @ 49A, 10V 3.6V @ 100µA 39 nC @ 10 V ±20V 1685 pF @ 50 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7540TRLPBF

IRFR7540TRLPBF

MOSFET N-CH 60V 90A DPAK

Infineon Technologies
3,589 -

RFQ

IRFR7540TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7437TRLPBF

IRFSL7437TRLPBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies
3,060 -

RFQ

IRFSL7437TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET®, StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R145CFD7AXKSA1

IPW65R145CFD7AXKSA1

MOSFET N-CH 650V 17A TO247-3

Infineon Technologies
3,089 -

RFQ

IPW65R145CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) - 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R099P6XKSA1

IPA60R099P6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies
3,976 -

RFQ

IPA60R099P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R110CFD7XKSA1

IPW65R110CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,146 -

RFQ

IPW65R110CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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