Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPU60R1K5CEAKMA1

IPU60R1K5CEAKMA1

MOSFET N-CH 600V 3.1A TO251-3

Infineon Technologies
3,965 -

RFQ

IPU60R1K5CEAKMA1

Ficha técnica

Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) - 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V - 200 pF @ 100 V - - -40°C ~ 150°C (TJ) Through Hole
IPP65R065C7XKSA1

IPP65R065C7XKSA1

MOSFET N-CH 650V 33A TO220-3

Infineon Technologies
2,440 -

RFQ

IPP65R065C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R041CFD7XKSA1

IPW65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
3,893 -

RFQ

IPW65R041CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R039M1HXTMA1

IMBG65R039M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
3,997 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IMBG120R060M1HXTMA1

IMBG120R060M1HXTMA1

SICFET N-CH 1.2KV 36A TO263

Infineon Technologies
2,638 -

RFQ

IMBG120R060M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) - 83mOhm @ 13A, 18V 5.7V @ 5.6mA 34 nC @ 18 V +18V, -15V 1145 pF @ 800 V Standard 181W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW35N60CFDFKSA1

SPW35N60CFDFKSA1

MOSFET N-CH 600V 34.1A TO247-3

Infineon Technologies
3,505 -

RFQ

SPW35N60CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 34.1A (Tc) 10V 118mOhm @ 21.6A, 10V 5V @ 1.9mA 212 nC @ 10 V ±20V 5060 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4668PBFXKMA1

IRFP4668PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,551 -

RFQ

IRFP4668PBFXKMA1

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 9.7mOhm @ 81A, 10V 5V @ 250µA 241 nC @ 10 V ±30V 10720 pF @ 50 V - 520W -55°C ~ 175°C (TJ) Through Hole
IPW60R075CPFKSA1

IPW60R075CPFKSA1

MOSFET N-CH 650V 39A TO247-3

Infineon Technologies
2,299 -

RFQ

IPW60R075CPFKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 75mOhm @ 26A, 10V 3.5V @ 1.7mA 116 nC @ 10 V ±20V 4000 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IGOT60R070D1AUMA3

IGOT60R070D1AUMA3

GANFET N-CH

Infineon Technologies
2,677 -

RFQ

IGOT60R070D1AUMA3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMBG65R030M1HXTMA1

IMBG65R030M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,820 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPDQ60R022S7XTMA1

IPDQ60R022S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
2,247 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPZA65R029CFD7XKSA1

IPZA65R029CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
2,685 -

RFQ

IPZA65R029CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) 10V 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R041CFDFKSA2

IPW65R041CFDFKSA2

MOSFET N-CH 650V 68.5A TO247-3

Infineon Technologies
2,568 -

RFQ

IPW65R041CFDFKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
AIMW120R080M1XKSA1

AIMW120R080M1XKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies
2,232 -

RFQ

AIMW120R080M1XKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A (Tc) 15V 104mOhm @ 13A, 15V 5.7V @ 5.6mA 28 nC @ 15 V +20V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R330P6XKSA1

IPA60R330P6XKSA1

MOSFET N-CH 600V 12A TO220-FP

Infineon Technologies
2,100 -

RFQ

IPA60R330P6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R230P6XKSA1

IPP60R230P6XKSA1

MOSFET N-CH 600V 16.8A TO220-3

Infineon Technologies
3,565 -

RFQ

IPP60R230P6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R330P6XKSA1

IPP60R330P6XKSA1

MOSFET N-CH 600V 12A TO220-3

Infineon Technologies
3,523 -

RFQ

IPP60R330P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R380P6XKSA1

IPP60R380P6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Infineon Technologies
2,921 -

RFQ

IPP60R380P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R230P6FKSA1

IPW60R230P6FKSA1

MOSFET N-CH 600V 16.8A TO247-3

Infineon Technologies
2,034 -

RFQ

IPW60R230P6FKSA1

Ficha técnica

Tube,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R330P6FKSA1

IPW60R330P6FKSA1

MOSFET N-CH 600V 12A TO247-3

Infineon Technologies
3,410 -

RFQ

IPW60R330P6FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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