Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMZA120R040M1HXKSA1

IMZA120R040M1HXKSA1

SIC DISCRETE

Infineon Technologies
2,382 -

RFQ

IMZA120R040M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 15V, 18V 54.4mOhm @ 19.3A, 18V 5.2V @ 8.3mA 39 nC @ 18 V +20V, -5V 1620 nF @ 25 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R190P6ATMA1

IPB60R190P6ATMA1

MOSFET N-CH 600V 20.2A D2PAK

Infineon Technologies
3,778 -

RFQ

IPB60R190P6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R018CFD7XKSA1

IPW65R018CFD7XKSA1

650 V COOLMOS CFD7 SUPERJUNCTION

Infineon Technologies
2,873 -

RFQ

IPW65R018CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11659 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPDQ60R010S7XTMA1

IPDQ60R010S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,779 -

RFQ

IPDQ60R010S7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V 11987 pF @ 300 V - 694W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R380P6ATMA1

IPB60R380P6ATMA1

MOSFET N-CH 600V 10.6A D2PAK

Infineon Technologies
3,176 -

RFQ

IPB60R380P6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDQ60R010S7AXTMA1

IPDQ60R010S7AXTMA1

AUTOMOTIVE PG-HDSOP-22

Infineon Technologies
3,955 -

RFQ

IPDQ60R010S7AXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V 11987 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRL40S212

IRL40S212

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,064 -

RFQ

IRL40S212

Ficha técnica

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R520CPATMA1

IPD60R520CPATMA1

MOSFET N-CH 600V 6.8A TO252-3

Infineon Technologies
2,211 -

RFQ

IPD60R520CPATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R600CPATMA1

IPD60R600CPATMA1

MOSFET N-CH 600V 6.1A TO252-3

Infineon Technologies
2,864 -

RFQ

IPD60R600CPATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP06CN10NGXKSA1

IPP06CN10NGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,685 -

RFQ

IPP06CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 139 nC @ 10 V ±20V 9200 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CN10NGXKSA1

IPP12CN10NGXKSA1

MOSFET N-CH 100V 67A TO220-3

Infineon Technologies
3,833 -

RFQ

IPP12CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.9mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP35CN10NGXKSA1

IPP35CN10NGXKSA1

MOSFET N-CH 100V 27A TO220-3

Infineon Technologies
2,111 -

RFQ

IPP35CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 35mOhm @ 27A, 10V 4V @ 29µA 24 nC @ 10 V ±20V 1570 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP052NE7N3GHKSA1

IPP052NE7N3GHKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
3,058 -

RFQ

IPP052NE7N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N08N3GHKSA1

IPP100N08N3GHKSA1

MOSFET N-CH 80V 70A TO220-3

Infineon Technologies
2,953 -

RFQ

IPP100N08N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 10mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP093N06N3GHKSA1

IPP093N06N3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
3,594 -

RFQ

IPP093N06N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 34µA 36 nC @ 10 V ±20V 2900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP086N10N3GHKSA1

IPP086N10N3GHKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
3,111 -

RFQ

IPP086N10N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP084N06L3GHKSA1

IPP084N06L3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
2,774 -

RFQ

IPP084N06L3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP075N15N3GHKSA1

IPP075N15N3GHKSA1

MOSFET N-CH 150V 100A TO220-3

Infineon Technologies
2,536 -

RFQ

IPP075N15N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP072N10N3GHKSA1

IPP072N10N3GHKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
2,358 -

RFQ

IPP072N10N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N08N3GHKSA1

IPP057N08N3GHKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
2,181 -

RFQ

IPP057N08N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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