Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP057N06N3GHKSA1

IPP057N06N3GHKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
3,830 -

RFQ

IPP057N06N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP052N06L3GHKSA1

IPP052N06L3GHKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,607 -

RFQ

IPP052N06L3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP045N10N3GHKSA1

IPP045N10N3GHKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,545 -

RFQ

IPP045N10N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06N3GHKSA1

IPP040N06N3GHKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,906 -

RFQ

IPP040N06N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP037N08N3GHKSA1

IPP037N08N3GHKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies
2,892 -

RFQ

IPP037N08N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP032N06N3GHKSA1

IPP032N06N3GHKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
2,746 -

RFQ

IPP032N06N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP030N10N3GHKSA1

IPP030N10N3GHKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,050 -

RFQ

IPP030N10N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP024N06N3GHKSA1

IPP024N06N3GHKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
3,014 -

RFQ

IPP024N06N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIPC26N60S5X1SA1

SIPC26N60S5X1SA1

MOSFET COOL MOS SAWED WAFER

Infineon Technologies
3,494 -

RFQ

SIPC26N60S5X1SA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPB60R230P6ATMA1

IPB60R230P6ATMA1

MOSFET N-CH 600V 16.8A TO263-3

Infineon Technologies
2,367 -

RFQ

IPB60R230P6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMZA120R020M1HXKSA1

IMZA120R020M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,833 -

RFQ

IMZA120R020M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 98A (Tc) 15V, 18V 26.9mOhm @ 41A, 18V 5.2V @ 17.6mA 83 nC @ 18 V +20V, -5V 3460 nF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R014M1HXKSA1

IMW120R014M1HXKSA1

SIC DISCRETE

Infineon Technologies
2,381 -

RFQ

IMW120R014M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 127A (Tc) 15V, 18V 18.4mOhm @ 54.3A, 18V 5.2V @ 23.4mA 110 nC @ 18 V +20V, -5V 4580 nF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA120R014M1HXKSA1

IMZA120R014M1HXKSA1

SIC DISCRETE

Infineon Technologies
2,742 -

RFQ

IMZA120R014M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 127A (Tc) 15V, 18V 18.4mOhm @ 54.3A, 18V 5.2V @ 23.4mA 110 nC @ 18 V +20V, -5V 4580 nF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R007M1HXKSA1

IMW120R007M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,613 -

RFQ

IMW120R007M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 225A (Tc) 15V, 18V 9.9mOhm @ 108A, 18V 5.2V @ 47mA 220 nC @ 18 V +20V, -5V 9170 nF @ 25 V - 750W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA120R007M1HXKSA1

IMZA120R007M1HXKSA1

SIC DISCRETE

Infineon Technologies
2,054 -

RFQ

IMZA120R007M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 225A (Tc) 15V, 18V 9.9mOhm @ 108A, 18V 5.2V @ 47mA 220 nC @ 18 V +20V, -5V 9170 nF @ 25 V - 750W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP039N04LGHKSA1

IPP039N04LGHKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
2,747 -

RFQ

IPP039N04LGHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.9mOhm @ 80A, 10V 2V @ 45µA 78 nC @ 10 V ±20V 6100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R199CPHKSA1

IPP50R199CPHKSA1

MOSFET N-CH 550V 17A TO220-3

Infineon Technologies
2,834 -

RFQ

IPP50R199CPHKSA1

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R299CPHKSA1

IPP50R299CPHKSA1

MOSFET N-CH 550V 12A TO220-3

Infineon Technologies
3,931 -

RFQ

IPP50R299CPHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP07N60C3HKSA1

SPP07N60C3HKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies
3,152 -

RFQ

SPP07N60C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP20N60CFDHKSA1

SPP20N60CFDHKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies
3,968 -

RFQ

SPP20N60CFDHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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