Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP80N04S2H4AKSA2

IPP80N04S2H4AKSA2

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
3,832 -

RFQ

IPP80N04S2H4AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2H5AKSA2

IPP80N06S2H5AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
33,000 -

RFQ

IPP80N06S2H5AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L06AKSA2

IPP80N06S2L06AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
18,500 -

RFQ

IPP80N06S2L06AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.3mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L09AKSA2

IPP80N06S2L09AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
27,000 -

RFQ

IPP80N06S2L09AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L11AKSA2

IPP80N06S2L11AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
25,500 -

RFQ

IPP80N06S2L11AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2LH5AKSA2

IPP80N06S2LH5AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
37,835 -

RFQ

IPP80N06S2LH5AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2V @ 250µA 190 nC @ 10 V ±20V 5000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50R280CEATMA1

IPD50R280CEATMA1

MOSFET N-CH 500V 13A TO252-3

Infineon Technologies
2,051 -

RFQ

IPD50R280CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R450E6ATMA1

IPD60R450E6ATMA1

MOSFET N-CH 600V 9.2A TO252-3

Infineon Technologies
9,353 -

RFQ

IPD60R450E6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF150P221AKMA1

IRF150P221AKMA1

MOSFET N-CH 150V 186A TO247-3

Infineon Technologies
3,041 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 186A (Tc) 10V 4.5mOhm @ 100A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 6000 pF @ 75 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R065S7XKSA1

IPP60R065S7XKSA1

HIGH POWER_NEW PG-TO220-3

Infineon Technologies
3,125 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPDQ60R040S7XTMA1

IPDQ60R040S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
2,190 -

RFQ

IPDQ60R040S7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 272W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP4568PBFXKMA1

IRFP4568PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,791 -

RFQ

IRFP4568PBFXKMA1

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100P218AKMA1

IRF100P218AKMA1

MOSFET N-CH 100V 209A TO247AC

Infineon Technologies
2,173 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 209A (Tc) 6V, 10V 1.28mOhm @ 100A, 10V 3.8V @ 278µA 412 nC @ 10 V ±20V 24000 pF @ 50 V - 3.8W (Ta), 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R050CFD7AATMA1

IPB65R050CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies
2,316 -

RFQ

IPB65R050CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±30V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP4668PBF

IRFP4668PBF

MOSFET N-CH 200V 130A TO247AC

Infineon Technologies
2,902 -

RFQ

IRFP4668PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 9.7mOhm @ 81A, 10V 5V @ 250µA 241 nC @ 10 V ±30V 10720 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4468PBFXKMA1

IRFP4468PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies
2,235 -

RFQ

IRFP4468PBFXKMA1

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 290A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R060CFD7XKSA1

IPW65R060CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
3,647 -

RFQ

IPW65R060CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R040S7XKSA1

IPP60R040S7XKSA1

HIGH POWER_NEW PG-TO220-3

Infineon Technologies
3,169 -

RFQ

IPP60R040S7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R520C6ATMA1

IPD60R520C6ATMA1

MOSFET N-CH 600V 8.1A TO252-3

Infineon Technologies
2,761 -

RFQ

IPD60R520C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU60R1K0CEAKMA1

IPU60R1K0CEAKMA1

MOSFET N-CH 600V 4.3A TO251-3

Infineon Technologies
3,649 -

RFQ

IPU60R1K0CEAKMA1

Ficha técnica

Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) - 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V - 280 pF @ 100 V - - -40°C ~ 150°C (TJ) Through Hole
Total 8399 Record«Prev1... 278279280281282283284285...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário