Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R029CFD7XKSA1

IPW65R029CFD7XKSA1

MOSFET N-CH 650V 69A TO247-3

Infineon Technologies
3,289 -

RFQ

IPW65R029CFD7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) - 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL60R255P6AUMA1

IPL60R255P6AUMA1

MOSFET N-CH 600V 15.9A 4VSON

Infineon Technologies
2,946 -

RFQ

IPL60R255P6AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15.9A (Tc) 10V 255mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSP298H6327XUSA1

BSP298H6327XUSA1

MOSFET N-CH 400V 500MA SOT223-4

Infineon Technologies
3,030 -

RFQ

BSP298H6327XUSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 500mA (Ta) 10V 3Ohm @ 500mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP300H6327XUSA1

BSP300H6327XUSA1

MOSFET N-CH 800V 190MA SOT223-4

Infineon Technologies
2,744 -

RFQ

BSP300H6327XUSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 190mA (Ta) 10V 20Ohm @ 190mA, 10V 4V @ 1mA - ±20V 230 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD25N06S4L30ATMA1

IPD25N06S4L30ATMA1

MOSFET N-CH 60V 25A TO252-31

Infineon Technologies
2,630 -

RFQ

IPD25N06S4L30ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 30mOhm @ 25A, 10V 2.2V @ 8µA 16.3 nC @ 10 V ±16V 1220 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP200N15N3GHKSA1

IPP200N15N3GHKSA1

MOSFET N-CH 150V 50A TO220-3

Infineon Technologies
2,919 -

RFQ

IPP200N15N3GHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSG0812NDATMA1

BSG0812NDATMA1

MOSFET N-CH 8TISON

Infineon Technologies
2,706 -

RFQ

BSG0812NDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
IPD60R380P6BTMA1

IPD60R380P6BTMA1

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
2,772 -

RFQ

IPD60R380P6BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R950CEATMA1

IPD50R950CEATMA1

MOSFET N-CH 500V 4.3A TO252-3

Infineon Technologies
3,741 -

RFQ

IPD50R950CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R800CEATMA1

IPD50R800CEATMA1

MOSFET N CH 500V 5A TO252

Infineon Technologies
2,390 -

RFQ

IPD50R800CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R650CEATMA1

IPD50R650CEATMA1

MOSFET N-CH 500V 6.1A TO252-3

Infineon Technologies
2,725 -

RFQ

IPD50R650CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V 3.5V @ 150µA 15 nC @ 10 V ±20V 342 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R500CEATMA1

IPD50R500CEATMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies
2,458 -

RFQ

IPD50R500CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGLD60R070D1AUMA3

IGLD60R070D1AUMA3

GANFET N-CH

Infineon Technologies
2,764 -

RFQ

IGLD60R070D1AUMA3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 15A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R070D1ATMA4

IGT60R070D1ATMA4

GANFET N-CH

Infineon Technologies
2,731 -

RFQ

IGT60R070D1ATMA4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW90R120C3XKSA1

IPW90R120C3XKSA1

MOSFET N-CH 900V 36A TO247-3

Infineon Technologies
3,364 -

RFQ

IPW90R120C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 2.9mA 270 nC @ 10 V ±20V 6800 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50R380CEATMA1

IPD50R380CEATMA1

MOSFET N-CH 500V 14.1A TO252-3

Infineon Technologies
2,114 -

RFQ

IPD50R380CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14.1A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMBG65R022M1HXTMA1

IMBG65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
3,323 -

RFQ

IMBG65R022M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IMW120R040M1HXKSA1

IMW120R040M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,812 -

RFQ

IMW120R040M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 15V, 18V 54.4mOhm @ 19.3A, 18V 5.2V @ 10mA 39 nC @ 18 V +20V, -5V 1620 nF @ 25 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZA65R018CFD7XKSA1

IPZA65R018CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
3,721 -

RFQ

IPZA65R018CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11660 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG120R030M1HXTMA1

IMBG120R030M1HXTMA1

SICFET N-CH 1.2KV 56A TO263

Infineon Technologies
3,509 -

RFQ

IMBG120R030M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 41mOhm @ 25A, 18V 5.7V @ 11.5mA 63 nC @ 18 V +18V, -15V 2290 pF @ 800 V Standard 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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