Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
64-4123PBF

64-4123PBF

MOSFET N-CH 100V DPAK

Infineon Technologies
3,972 -

RFQ

64-4123PBF

Ficha técnica

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AUIRF7739L2

AUIRF7739L2

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies
2,228 -

RFQ

AUIRF7739L2

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUXTLR3110Z

AUXTLR3110Z

MOSFET N-CH 100V DPAK

Infineon Technologies
3,221 -

RFQ

AUXTLR3110Z

Ficha técnica

Tube * Obsolete - - - - - - - - - - - - - -
AUXFN8403TR

AUXFN8403TR

MOSFET N-CH 40V 95A 8PQFN

Infineon Technologies
3,424 -

RFQ

AUXFN8403TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7885TRPBF

IRFH7885TRPBF

MOSFET N-CH 80V 22A 8PQFN

Infineon Technologies
3,457 -

RFQ

IRFH7885TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FASTIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta) 10V 3.9mOhm @ 50A, 10V 3.6V @ 150µA 54 nC @ 10 V ±20V 2311 pF @ 40 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7882TRPBF

IRFH7882TRPBF

MOSFET N-CH 80V 26A 8PQFN

Infineon Technologies
3,013 -

RFQ

IRFH7882TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FASTIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 26A (Ta) 10V 3.1mOhm @ 50A, 10V 3.6V @ 250µA 74 nC @ 10 V ±20V 3186 pF @ 40 V - 4W (Ta), 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU60R2K0C6AKMA1

IPU60R2K0C6AKMA1

MOSFET N-CH 600V 2.4A TO251-3

Infineon Technologies
47,296 -

RFQ

IPU60R2K0C6AKMA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
SN7002WH6433XTMA1

SN7002WH6433XTMA1

MOSFET N-CH 60V 230MA SOT-323

Infineon Technologies
3,950 -

RFQ

SN7002WH6433XTMA1

Ficha técnica

Tape & Reel (TR),Bulk * Not For New Designs - - - - 4.5V, 10V - - - ±20V - - - - -
IPI037N08N3GXKSA1

IPI037N08N3GXKSA1

MOSFET N-CH 80V 100A TO262-3

Infineon Technologies
2,884 -

RFQ

IPI037N08N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI08N50C3HKSA1

SPI08N50C3HKSA1

MOSFET N-CH 500V 7.6A TO262-3

Infineon Technologies
2,052 -

RFQ

SPI08N50C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI11N60C3HKSA1

SPI11N60C3HKSA1

MOSFET N-CH 600V 11A TO262-3

Infineon Technologies
3,606 -

RFQ

SPI11N60C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI11N65C3HKSA1

SPI11N65C3HKSA1

MOSFET N-CH 650V 11A TO262-3

Infineon Technologies
3,877 -

RFQ

SPI11N65C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI12N50C3HKSA1

SPI12N50C3HKSA1

MOSFET N-CH 500V 11.6A TO262-3

Infineon Technologies
2,568 -

RFQ

SPI12N50C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI15N65C3HKSA1

SPI15N65C3HKSA1

MOSFET N-CH 650V 15A TO262-3

Infineon Technologies
3,207 -

RFQ

SPI15N65C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI20N60C3HKSA1

SPI20N60C3HKSA1

MOSFET N-CH 600V 20.7A TO262-3

Infineon Technologies
2,330 -

RFQ

SPI20N60C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI21N50C3HKSA1

SPI21N50C3HKSA1

MOSFET N-CH 500V 21A TO262-3

Infineon Technologies
2,029 -

RFQ

SPI21N50C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP11N60CFDHKSA1

SPP11N60CFDHKSA1

MOSFET N-CH 600V 11A TO220-3

Infineon Technologies
3,154 -

RFQ

SPP11N60CFDHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 500µA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSL303SPEH6327XTSA1

BSL303SPEH6327XTSA1

MOSFET P-CH 30V 6.3A TSOP-6

Infineon Technologies
3,684 -

RFQ

BSL303SPEH6327XTSA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 33mOhm @ 6.3A, 10V 2V @ 30µA 20.9 nC @ 10 V ±20V 1401 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL305SPEH6327XTSA1

BSL305SPEH6327XTSA1

MOSFET P-CH 30V 5.3A TSOP-6

Infineon Technologies
2,958 -

RFQ

BSL305SPEH6327XTSA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 45mOhm @ 5.3A, 10V 2V @ 20µA 14 nC @ 10 V ±20V 939 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP179H6327XTSA1

BSP179H6327XTSA1

MOSFET N-CH 400V 210MA SOT223-4

Infineon Technologies
51,000 -

RFQ

BSP179H6327XTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 210mA (Ta) 0V, 10V 18Ohm @ 210mA, 10V 1V @ 94µA 6.8 nC @ 5 V ±20V 135 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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