Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP120N06S403AKSA2

IPP120N06S403AKSA2

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
2,634 -

RFQ

IPP120N06S403AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 120µA 160 nC @ 10 V ±20V 13150 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP45N06S4L08AKSA2

IPP45N06S4L08AKSA2

MOSFET N-CH 60V 45A TO220-3

Infineon Technologies
9,500 -

RFQ

IPP45N06S4L08AKSA2

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP90N06S404AKSA2

IPP90N06S404AKSA2

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,776 -

RFQ

IPP90N06S404AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB017N10N5ATMA1

IPB017N10N5ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
3,217 -

RFQ

IPB017N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 279µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R099CPATMA1

IPB60R099CPATMA1

MOSFET N-CH 600V 31A TO263-3

Infineon Technologies
5,962 -

RFQ

IPB60R099CPATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF4905

AUIRF4905

MOSFET P-CH 55V 74A TO220AB

Infineon Technologies
4,167 -

RFQ

AUIRF4905

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP2907PBF

IRFP2907PBF

MOSFET N-CH 75V 209A TO247AC

Infineon Technologies
9,506 -

RFQ

IRFP2907PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 209A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120N08S403AKSA1

IPP120N08S403AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
177 -

RFQ

IPP120N08S403AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP051N15N5AKSA1

IPP051N15N5AKSA1

MOSFET N-CH 150V 120A TO220-3

Infineon Technologies
975 -

RFQ

IPP051N15N5AKSA1

Ficha técnica

Tube OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 5.1mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 500mW (Tc) -55°C ~ 175°C (TJ) Through Hole
SPW20N60C3FKSA1

SPW20N60C3FKSA1

MOSFET N-CH 650V 20.7A TO247-3

Infineon Technologies
18,487 -

RFQ

SPW20N60C3FKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP20N60C3XKSA1

SPP20N60C3XKSA1

MOSFET N-CH 600V 20.7A TO220-3

Infineon Technologies
3,148 -

RFQ

SPP20N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R099C6XKSA1

IPA60R099C6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies
13,113 -

RFQ

IPA60R099C6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

MOSFET N-CH 200V 88A TO220-3

Infineon Technologies
5,787 -

RFQ

IPP110N20N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 11mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R060P7XKSA1

IPW60R060P7XKSA1

MOSFET N-CH 600V 48A TO247-3

Infineon Technologies
2,205 -

RFQ

IPW60R060P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 164W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT60R050G7XTMA1

IPT60R050G7XTMA1

MOSFET N-CH 650V 44A 8HSOF

Infineon Technologies
2,580 -

RFQ

IPT60R050G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 50mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2670 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP60R099CPXKSA1

IPP60R099CPXKSA1

MOSFET N-CH 650V 31A TO220-3

Infineon Technologies
365 -

RFQ

IPP60R099CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP299H6327XUSA1

BSP299H6327XUSA1

MOSFET N-CH 500V 400MA SOT223-4

Infineon Technologies
2,979 -

RFQ

BSP299H6327XUSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 400mA (Ta) 10V 4Ohm @ 400mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP110N20NAAKSA1

IPP110N20NAAKSA1

MOSFET N-CH 200V 88A TO220-3

Infineon Technologies
1,490 -

RFQ

IPP110N20NAAKSA1

Ficha técnica

Tube OptimWatt™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 10.7mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R037P7XKSA1

IPW60R037P7XKSA1

MOSFET N-CH 650V 76A TO247-3

Infineon Technologies
4,135 -

RFQ

IPW60R037P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R045C7FKSA1

IPW65R045C7FKSA1

MOSFET N-CH 650V 46A TO247-3

Infineon Technologies
155 -

RFQ

IPW65R045C7FKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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