Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB65R095C7ATMA1

IPB65R095C7ATMA1

MOSFET N-CH 650V 24A D2PAK

Infineon Technologies
3,913 -

RFQ

IPB65R095C7ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R125C7ATMA1

IPB65R125C7ATMA1

MOSFET N-CH 650V 18A D2PAK

Infineon Technologies
3,940 -

RFQ

IPB65R125C7ATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R280E6ATMA1

IPB65R280E6ATMA1

MOSFET N-CH 650V 13.8A D2PAK

Infineon Technologies
3,961 -

RFQ

IPB65R280E6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ E6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N08S406ATMA1

IPB80N08S406ATMA1

MOSFET N-CH 80V 80A TO263-3

Infineon Technologies
3,986 -

RFQ

IPB80N08S406ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 90µA 70 nC @ 10 V ±20V 4800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80R290C3AATMA1

IPB80R290C3AATMA1

MOSFET P-CH TO263-3

Infineon Technologies
2,047 -

RFQ

IPB80R290C3AATMA1

Ficha técnica

Tape & Reel (TR),Bulk * Obsolete - - - - - - - - - - - - - -
IPC100N04S402ATMA1

IPC100N04S402ATMA1

MOSFET N-CH 40V 100A 8TDSON

Infineon Technologies
2,275 -

RFQ

IPC100N04S402ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 50A, 10V 4V @ 80µA 105 nC @ 10 V ±20V 8100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC60N04S406ATMA1

IPC60N04S406ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies
3,234 -

RFQ

IPC60N04S406ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 6mOhm @ 30A, 10V 4V @ 30µA 33 nC @ 10 V ±20V 2650 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC60N04S4L06ATMA1

IPC60N04S4L06ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies
3,347 -

RFQ

IPC60N04S4L06ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 5.6mOhm @ 30A, 10V 2.2V @ 30µA 43 nC @ 10 V ±16V 3600 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC80N04S403ATMA1

IPC80N04S403ATMA1

MOSFET N-CH 40V 80A TDSON-8-23

Infineon Technologies
3,034 -

RFQ

IPC80N04S403ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 40A, 10V 4V @ 60µA 71 nC @ 10 V ±20V 5720 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R650CEATMA1

IPD65R650CEATMA1

MOSFET N-CH 650V 10.1A TO252-3

Infineon Technologies
3,128 -

RFQ

IPD65R650CEATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 0.21mA 23 nC @ 10 V ±20V 440 pF @ 100 V Super Junction 86W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPI084N06L3GXKSA1

IPI084N06L3GXKSA1

MOSFET N-CH 60V 50A TO262-3

Infineon Technologies
119,500 -

RFQ

IPI084N06L3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N08S404AKSA1

IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies
2,537 -

RFQ

IPI120N08S404AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N10S403AKSA1

IPI120N10S403AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies
3,302 -

RFQ

IPI120N10S403AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N10S405AKSA1

IPI120N10S405AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies
2,898 -

RFQ

IPI120N10S405AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.3mOhm @ 100A, 10V 3.5V @ 120µA 91 nC @ 10 V ±20V 6540 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120P04P404AKSA1

IPI120P04P404AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies
2,584 -

RFQ

IPI120P04P404AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies
2,227 -

RFQ

IPI120P04P4L03AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies
3,382 -

RFQ

IPI65R280E6XKSA1

Ficha técnica

Tube CoolMOS™ E6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70P04P409AKSA1

IPI70P04P409AKSA1

MOSFET N-CH 40V 72A TO262-3

Infineon Technologies
2,229 -

RFQ

IPI70P04P409AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.4mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P405AKSA1

IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies
2,998 -

RFQ

IPI80P03P405AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P04P405AKSA1

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
2,305 -

RFQ

IPI80P04P405AKSA1

Ficha técnica

Tube,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 288289290291292293294295...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário