Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPB20N60C3ATMA1

SPB20N60C3ATMA1

MOSFET N-CH 650V 20.7A TO263-3

Infineon Technologies
919 -

RFQ

SPB20N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB020NE7N3GATMA1

IPB020NE7N3GATMA1

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,620 -

RFQ

IPB020NE7N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80R290C3AATMA2

IPB80R290C3AATMA2

MOSFET N-CH 800V 17A TO263-3

Infineon Technologies
3,000 -

RFQ

IPB80R290C3AATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 117 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP260NPBF

IRFP260NPBF

MOSFET N-CH 200V 50A TO247AC

Infineon Technologies
7,677 -

RFQ

IRFP260NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 28A, 10V 4V @ 250µA 234 nC @ 10 V ±20V 4057 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4310ZPBF

IRFB4310ZPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
7,819 -

RFQ

IRFB4310ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4110GPBF

IRFI4110GPBF

MOSFET N-CH 100V 72A TO220AB FP

Infineon Technologies
33,499 -

RFQ

IRFI4110GPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 4.5mOhm @ 43A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 9540 pF @ 50 V - 61W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP7430PBF

IRFP7430PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies
1,091 -

RFQ

IRFP7430PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 366W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUS300N08S5N012TATMA1

IAUS300N08S5N012TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies
3,274 -

RFQ

IAUS300N08S5N012TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF4905STRL

AUIRF4905STRL

MOSFET P-CH 55V 42A D2PAK

Infineon Technologies
705 -

RFQ

AUIRF4905STRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP80P06PHXKSA1

SPP80P06PHXKSA1

MOSFET P-CH 60V 80A TO220-3

Infineon Technologies
3,646 -

RFQ

SPP80P06PHXKSA1

Ficha técnica

Tube SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLB3036PBF

IRLB3036PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
37,437 -

RFQ

IRLB3036PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLB4030PBF

IRLB4030PBF

MOSFET N-CH 100V 180A TO220AB

Infineon Technologies
13,775 -

RFQ

IRLB4030PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3077PBF

IRFB3077PBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies
4,916 -

RFQ

IRFB3077PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9400 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4227PBF

IRFP4227PBF

MOSFET N-CH 200V 65A TO247AC

Infineon Technologies
3,825 -

RFQ

IRFP4227PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 25mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF8252TRPBF-1

IRF8252TRPBF-1

MOSFET N-CH 25V 25A 8SO

Infineon Technologies
3,551 -

RFQ

IRF8252TRPBF-1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH7187TRPBF

IRFH7187TRPBF

MOSFET N-CH 100V 18A/105A 8PQFN

Infineon Technologies
2,764 -

RFQ

IRFH7187TRPBF

Ficha técnica

Tape & Reel (TR) FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta), 105A (Tc) 10V 6mOhm @ 50A, 10V 3.6V @ 150µA 50 nC @ 10 V ±20V 2116 pF @ 50 V - 3.8W (Ta), 132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

Infineon Technologies
3,538 -

RFQ

IPL65R190E6AUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 700µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R310E6AUMA1

IPL65R310E6AUMA1

MOSFET N-CH 650V 13.1A THIN-PAK

Infineon Technologies
2,191 -

RFQ

IPL65R310E6AUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.1A (Tc) 10V 310mOhm @ 4.4A, 10V 3.5V @ 400µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R420E6AUMA1

IPL65R420E6AUMA1

MOSFET N-CH 650V 10.1A THIN-PAK

Infineon Technologies
2,341 -

RFQ

IPL65R420E6AUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 420mOhm @ 3.4A, 10V 3.5V @ 300µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R460CFDAUMA1

IPL65R460CFDAUMA1

MOSFET N-CH 650V 8.3A THIN-PAK

Infineon Technologies
3,131 -

RFQ

IPL65R460CFDAUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.3A (Tc) 10V 460mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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