Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPAW60R190CEXKSA1

IPAW60R190CEXKSA1

MOSFET N-CH 600V 26.7A TO220

Infineon Technologies
3,736 -

RFQ

IPAW60R190CEXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26.7A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V Super Junction 34W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

MOSFET N-CH 600V 19.3A TO220

Infineon Technologies
1,220 -

RFQ

IPAW60R280CEXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 19.3A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V Super Junction 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAW60R600CEXKSA1

IPAW60R600CEXKSA1

MOSFET N-CH 600V 10.3A TO220

Infineon Technologies
3,807 -

RFQ

IPAW60R600CEXKSA1

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 444 pF @ 100 V Super Junction 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD60R650CEBTMA1

IPD60R650CEBTMA1

MOSFET N-CH 600V 7A TO252-3

Infineon Technologies
3,829 -

RFQ

IPD60R650CEBTMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 82W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD70R2K0CEAUMA1

IPD70R2K0CEAUMA1

MOSFET N-CH 700V 4A TO252-3

Infineon Technologies
3,723 -

RFQ

IPD70R2K0CEAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 2Ohm @ 1A, 10V 3.5V @ 70µA 7.8 nC @ 10 V ±20V 163 pF @ 100 V Super Junction 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD70R600CEAUMA1

IPD70R600CEAUMA1

MOSFET N-CH 700V 10.5A TO252-3

Infineon Technologies
3,128 -

RFQ

IPD70R600CEAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 0.21mA 22 nC @ 10 V ±20V 474 pF @ 100 V Super Junction 86W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPS70R600CEAKMA1

IPS70R600CEAKMA1

MOSFET N-CH 700V 10.5A TO251-3

Infineon Technologies
2,470 -

RFQ

IPS70R600CEAKMA1

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 0.21mA 22 nC @ 10 V ±20V 474 pF @ 100 V Super Junction 86W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU50R1K4CEAKMA1

IPU50R1K4CEAKMA1

MOSFET N-CH 500V 3.1A TO251-3

Infineon Technologies
416,723 -

RFQ

IPU50R1K4CEAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R2K0CEAKMA1

IPU50R2K0CEAKMA1

MOSFET N-CH 500V 2.4A TO251-3

Infineon Technologies
2,967 -

RFQ

IPU50R2K0CEAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R3K0CEAKMA1

IPU50R3K0CEAKMA1

MOSFET N-CH 500V 1.7A TO251-3

Infineon Technologies
3,424 -

RFQ

IPU50R3K0CEAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 1.7A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU50R950CEAKMA2

IPU50R950CEAKMA2

MOSFET N-CH 500V 4.3A TO251-3

Infineon Technologies
2,219 -

RFQ

IPU50R950CEAKMA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R520CPXKSA1

IPP50R520CPXKSA1

MOSFET N-CH 500V 7.1A TO220-3

Infineon Technologies
3,182 -

RFQ

IPP50R520CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI07N60C3XKSA1

SPI07N60C3XKSA1

MOSFET N-CH 600V 7.3A TO262-3

Infineon Technologies
67,990 -

RFQ

SPI07N60C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP034N03LGHKSA1

IPP034N03LGHKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
2,679 -

RFQ

IPP034N03LGHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 25 nC @ 4.5 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R350CPHKSA1

IPP50R350CPHKSA1

MOSFET N-CH 500V 10A TO220-3

Infineon Technologies
3,863 -

RFQ

IPP50R350CPHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS670S2LH6433XTMA1

BSS670S2LH6433XTMA1

MOSFET N-CH 55V 540MA SOT23

Infineon Technologies
3,842 -

RFQ

BSS670S2LH6433XTMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - 4.5V, 10V - - - ±20V - - - - -
IPP60R190P6XKSA1

IPP60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-3

Infineon Technologies
21,455 -

RFQ

IPP60R190P6XKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 11 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP11N80C3XKSA1

SPP11N80C3XKSA1

MOSFET N-CH 800V 11A TO220-3

Infineon Technologies
4,995 -

RFQ

SPP11N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7530PBF

IRFB7530PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
6,779 -

RFQ

IRFB7530PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7730PBF

IRFB7730PBF

MOSFET N-CH 75V 195A TO220AB

Infineon Technologies
352 -

RFQ

IRFB7730PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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