Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMBG120R140M1HXTMA1

IMBG120R140M1HXTMA1

SICFET N-CH 1.2KV 18A TO263

Infineon Technologies
3,460 -

RFQ

IMBG120R140M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A (Tc) - 189mOhm @ 6A, 18V 5.7V @ 2.5mA 13.4 nC @ 18 V +18V, -15V 491 pF @ 800 V Standard 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,574 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
AUIRLZ24NS

AUIRLZ24NS

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
2,532 -

RFQ

AUIRLZ24NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R041CFD7ATMA1

IPB65R041CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
2,311 -

RFQ

IPB65R041CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R090CFD7XKSA1

IPW65R090CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,335 -

RFQ

IPW65R090CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF100P219AKMA1

IRF100P219AKMA1

MOSFET N-CH 100V TO247AC

Infineon Technologies
2,708 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 203A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 278µA 210 nC @ 10 V ±20V 12020 pF @ 50 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP4110

AUIRFP4110

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies
3,311 -

RFQ

AUIRFP4110

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZA60R080P7XKSA1

IPZA60R080P7XKSA1

MOSFET N-CH 600V 37A TO247-4

Infineon Technologies
3,856 -

RFQ

IPZA60R080P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 80mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 129W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R750E6ATMA1

IPD60R750E6ATMA1

MOSFET N-CH 600V 5.7A TO252-3

Infineon Technologies
3,287 -

RFQ

IPD60R750E6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU50R950CEAKMA1

IPU50R950CEAKMA1

MOSFET N-CH 500V 4.3A TO251-3

Infineon Technologies
163,349 -

RFQ

IPU50R950CEAKMA1

Ficha técnica

Tube,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R600C6AKMA1

IPU60R600C6AKMA1

MOSFET N-CH 600V 7.3A TO251-3

Infineon Technologies
3,440 -

RFQ

IPU60R600C6AKMA1

Ficha técnica

Tube CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R950C6AKMA1

IPU60R950C6AKMA1

MOSFET N-CH 600V 4.4A TO251-3

Infineon Technologies
3,338 -

RFQ

IPU60R950C6AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD65R600E6ATMA1

IPD65R600E6ATMA1

MOSFET N-CH 650V 7.3A TO252-3

Infineon Technologies
2,369 -

RFQ

IPD65R600E6ATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI80N04S204AKSA2

IPI80N04S204AKSA2

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
18,500 -

RFQ

IPI80N04S204AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S2H4AKSA2

IPI80N04S2H4AKSA2

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
14,500 -

RFQ

IPI80N04S2H4AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L05AKSA2

IPI80N06S2L05AKSA2

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
26,500 -

RFQ

IPI80N06S2L05AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L11AKSA2

IPI80N06S2L11AKSA2

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
40,500 -

RFQ

IPI80N06S2L11AKSA2

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N04S204AKSA2

IPP100N04S204AKSA2

MOSFET N-CH 40V 100A TO220-3

Infineon Technologies
10,500 -

RFQ

IPP100N04S204AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.6mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N04S2L03AKSA2

IPP100N04S2L03AKSA2

MOSFET N-CH 40V 100A TO220-3

Infineon Technologies
36,500 -

RFQ

IPP100N04S2L03AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S205AKSA2

IPP100N06S205AKSA2

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
16,000 -

RFQ

IPP100N06S205AKSA2

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5110 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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