Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3207Z-INF

AUIRFS3207Z-INF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
3,698 -

RFQ

AUIRFS3207Z-INF

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R460CEXKSA2

IPA80R460CEXKSA2

MOSFET N-CH 800V 10.8A TO220

Infineon Technologies
3,205 -

RFQ

IPA80R460CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 10.8A (Ta) 10V 460mOhm @ 7.1A, 10V 3.9V @ 680µA 64 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC430N25NSFDATMA1

BSC430N25NSFDATMA1

MOSFET N-CH 250V TSON-8

Infineon Technologies
3,356 -

RFQ

Tape & Reel (TR),Cut Tape (CT) OptiMOS™, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 36A (Tc) - - - - - - - - - Surface Mount
IPP80P03P4L04AKSA2

IPP80P03P4L04AKSA2

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies
2,485 -

RFQ

Tube Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) - 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R125CFD7ATMA1

IPB65R125CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
3,659 -

RFQ

IPB65R125CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 125mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120NTRPBF

IRFR9120NTRPBF

MOSFET P-CH 100V 6.6A DPAK

Infineon Technologies
80,159 -

RFQ

IRFR9120NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR024NTRPBF

IRFR024NTRPBF

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
45,359 -

RFQ

IRFR024NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3707ZTRPBF

IRFR3707ZTRPBF

MOSFET N-CH 30V 56A DPAK

Infineon Technologies
13,352 -

RFQ

IRFR3707ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR024NTRPBF

IRLR024NTRPBF

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
93,513 -

RFQ

IRLR024NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLL024NTRPBF

IRLL024NTRPBF

MOSFET N-CH 55V 3.1A SOT223

Infineon Technologies
86,350 -

RFQ

IRLL024NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ065N03LSATMA1

BSZ065N03LSATMA1

MOSFET N-CH 30V 12A/40A TSDSON

Infineon Technologies
9,357 -

RFQ

BSZ065N03LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 40A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 670 pF @ 15 V - 2.1W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7465TRPBF

IRF7465TRPBF

MOSFET N-CH 150V 1.9A 8SO

Infineon Technologies
5,864 -

RFQ

IRF7465TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR220NTRPBF

IRFR220NTRPBF

MOSFET N-CH 200V 5A DPAK

Infineon Technologies
33,955 -

RFQ

IRFR220NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9024NTRPBF

IRFR9024NTRPBF

MOSFET P-CH 55V 11A DPAK

Infineon Technologies
11,087 -

RFQ

IRFR9024NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9024NTRLPBF

IRFR9024NTRLPBF

MOSFET P-CH 55V 11A DPAK

Infineon Technologies
1,762 -

RFQ

IRFR9024NTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC050NE2LSATMA1

BSC050NE2LSATMA1

MOSFET N-CH 25V 39A/58A TDSON

Infineon Technologies
16,877 -

RFQ

BSC050NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 58A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2V @ 250µA 10.4 nC @ 10 V ±20V 760 pF @ 12 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1

MOSFET N-CH 25V 16A/40A TSDSON

Infineon Technologies
15,000 -

RFQ

BSZ036NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta), 40A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V 2V @ 250µA 16 nC @ 10 V ±20V 1200 pF @ 12 V - 2.1W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL2705TRPBF

IRLL2705TRPBF

MOSFET N-CH 55V 3.8A SOT223

Infineon Technologies
90,708 -

RFQ

IRLL2705TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 3.8A (Ta) 4V, 10V 40mOhm @ 3.8A, 10V 2V @ 250µA 48 nC @ 10 V ±16V 870 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB330P10NMATMA1

IPB330P10NMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies
2,187 -

RFQ

IPB330P10NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB320P10LMATMA1

IPB320P10LMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies
2,766 -

RFQ

IPB320P10LMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 63A (Tc) 4.5V, 10V 32mOhm @ 54A, 10V 2V @ 5.55mA 219 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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