Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA50R500CE

IPA50R500CE

MOSFET N-CH 500V 7.6A TO220-FP

Infineon Technologies
2,024 -

RFQ

IPA50R500CE

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V Super Junction 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP50R500CEXKSA1

IPP50R500CEXKSA1

MOSFET N-CH 500V 7.6A TO220-3

Infineon Technologies
1,685 -

RFQ

IPP50R500CEXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V Super Junction - - Through Hole
IPA50R520CP

IPA50R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,455 -

RFQ

IPA50R520CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB160N08S4-03ATMA1

IPB160N08S4-03ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,168 -

RFQ

IPB160N08S4-03ATMA1

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 150µA 112 nC @ 10 V ±20V 7750 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA032N06N3 G

IPA032N06N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,320 -

RFQ

IPA032N06N3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB80P03P4-05ATMA1

IPB80P03P4-05ATMA1

P-CHANNEL POWER MOSFET

Infineon Technologies
2,096 -

RFQ

IPB80P03P4-05ATMA1

Ficha técnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP299L6327

BSP299L6327

SMALL-SIGNAL N-CHANNEL MOSFET

Infineon Technologies
3,520 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S2-H4ATMA2

IPB80N04S2-H4ATMA2

N-CHANNEL POWER MOSFET

Infineon Technologies
3,312 -

RFQ

IPB80N04S2-H4ATMA2

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB023N04NG

IPB023N04NG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,002 -

RFQ

IPB023N04NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB70N04S406

IPB70N04S406

N-CHANNEL POWER MOSFET

Infineon Technologies
2,070 -

RFQ

IPB70N04S406

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.2mOhm @ 70A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB097N08N3GATMA1

IPB097N08N3GATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,347 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB065N06LG

IPB065N06LG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,525 -

RFQ

IPB065N06LG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.2mOhm @ 80A, 10V 2V @ 180µA 157 nC @ 10 V ±20V 5100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB051NE8NGATMA1

IPB051NE8NGATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,585 -

RFQ

IPB051NE8NGATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB031NE7N3 G

IPB031NE7N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,349 -

RFQ

IPB031NE7N3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB60R385CP

IPB60R385CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,909 -

RFQ

IPB60R385CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC205N10LSG

BSC205N10LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,571 -

RFQ

BSC205N10LSG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 45A (Tc) 4.5V, 10V 20.5mOhm @ 45A, 10V 2.4V @ 43µA 41 nC @ 10 V ±20V 2900 pF @ 50 V - 76W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R520CP

IPD60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,126 -

RFQ

IPD60R520CP

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD160N04LG

IPD160N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,918 -

RFQ

IPD160N04LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD30N06S3-24

IPD30N06S3-24

N-CHANNEL POWER MOSFET

Infineon Technologies
2,213 -

RFQ

IPD30N06S3-24

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSD816SNL6327

BSD816SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,312 -

RFQ

BSD816SNL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 243244245246247248249250...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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