Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR3636

AUIRLR3636

MOSFET N-CH 60V 50A DPAK

Infineon Technologies
3,312 -

RFQ

AUIRLR3636

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3915

AUIRLR3915

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
3,730 -

RFQ

AUIRLR3915

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3034

AUIRLS3034

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,714 -

RFQ

AUIRLS3034

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3034-7P

AUIRLS3034-7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,381 -

RFQ

AUIRLS3034-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3036

AUIRLS3036

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
3,762 -

RFQ

AUIRLS3036

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3036-7P

AUIRLS3036-7P

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
3,666 -

RFQ

AUIRLS3036-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3114Z

AUIRLS3114Z

MOSFET N-CH 40V 56A DPAK

Infineon Technologies
3,045 -

RFQ

AUIRLS3114Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 10V 4.9mOhm @ 56A, 10V 2.5V @ 100µA 53 nC @ 4.5 V ±16V 3617 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS4030

AUIRLS4030

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
2,227 -

RFQ

AUIRLS4030

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS4030-7P

AUIRLS4030-7P

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies
3,999 -

RFQ

AUIRLS4030-7P

Ficha técnica

Tube Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLSL3036

AUIRLSL3036

MOSFET N-CH 60V 195A TO262

Infineon Technologies
3,316 -

RFQ

AUIRLSL3036

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLU2905

AUIRLU2905

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
2,580 -

RFQ

AUIRLU2905

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO301SP

BSO301SP

P-CHANNEL POWER MOSFET

Infineon Technologies
3,406 -

RFQ

BSO301SP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSD314SPEL6327

BSD314SPEL6327

P-CHANNEL MOSFET

Infineon Technologies
3,748 -

RFQ

BSD314SPEL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA086N10N3 G

IPA086N10N3 G

OPTLMOS 3 POWER MOSFET

Infineon Technologies
3,468 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPA50R299CP

IPA50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,280 -

RFQ

IPA50R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP322PL6327

BSP322PL6327

P-CHANNEL MOSFET

Infineon Technologies
2,997 -

RFQ

BSP322PL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB075N04LG

IPB075N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,146 -

RFQ

IPB075N04LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA65R600C6

IPA65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,256 -

RFQ

IPA65R600C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB039N10N3GE8197ATMA1

IPB039N10N3GE8197ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,062 -

RFQ

IPB039N10N3GE8197ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB100P03P3L-04

IPB100P03P3L-04

P-CHANNEL POWER MOSFET

Infineon Technologies
3,535 -

RFQ

IPB100P03P3L-04

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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