Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7805PBF

IRF7805PBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
4,000 -

RFQ

IRF7805PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7805ZPBF

IRF7805ZPBF

MOSFET N-CH 30V 16A 8SO

Infineon Technologies
2,073 -

RFQ

IRF7805ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.8mOhm @ 16A, 10V 2.25V @ 250µA 27 nC @ 4.5 V ±20V 2080 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807D1PBF

IRF7807D1PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,366 -

RFQ

IRF7807D1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807D2PBF

IRF7807D2PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,611 -

RFQ

IRF7807D2PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807PBF

IRF7807PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,957 -

RFQ

IRF7807PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Tc) - Surface Mount
IRF7807VD1PBF

IRF7807VD1PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,950 -

RFQ

IRF7807VD1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VD2PBF

IRF7807VD2PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,881 -

RFQ

IRF7807VD2PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VPBF

IRF7807VPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,556 -

RFQ

IRF7807VPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811APBF

IRF7811APBF

MOSFET N-CH 28V 11A 8SO

Infineon Technologies
2,137 -

RFQ

IRF7811APBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 11A (Ta) 4.5V 10mOhm @ 11A, 10V 3V @ 250µA 26 nC @ 4.5 V ±12V 1760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811AVPBF

IRF7811AVPBF

MOSFET N-CH 30V 10.8A 8SO

Infineon Technologies
3,015 -

RFQ

IRF7811AVPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 10.8A (Ta) 4.5V 14mOhm @ 15A, 4.5V 3V @ 250µA 26 nC @ 5 V ±20V 1801 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
94-3412PBF

94-3412PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,666 -

RFQ

94-3412PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V 1V @ 250µA 33 nC @ 5 V ±12V 2335 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7821PBF

IRF7821PBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
2,284 -

RFQ

IRF7821PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
IRF7822PBF

IRF7822PBF

MOSFET N-CH 30V 18A 8SO

Infineon Technologies
3,421 -

RFQ

IRF7822PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V 6.5mOhm @ 15A, 4.5V 1V @ 250µA 60 nC @ 5 V ±12V 5500 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7831PBF

IRF7831PBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
2,253 -

RFQ

IRF7831PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.6mOhm @ 20A, 10V 2.35V @ 250µA 60 nC @ 4.5 V ±12V 6240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7832PBF

IRF7832PBF

MOSFET N-CH 30V 20A 8SO

Infineon Technologies
3,001 -

RFQ

IRF7832PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
IRFR7440TRPBF

IRFR7440TRPBF

MOSFET N-CH 40V 90A DPAK

Infineon Technologies
3,553 -

RFQ

IRFR7440TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1

MOSFET N-CH 200V 11.3A 8TDSON

Infineon Technologies
3,465 -

RFQ

BSC12DN20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 11.3A (Tc) 10V 125mOhm @ 5.7A, 10V 4V @ 25µA 8.7 nC @ 10 V ±20V 680 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP135H6327XTSA1

BSP135H6327XTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,269 -

RFQ

BSP135H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7425TRPBF

IRF7425TRPBF

MOSFET P-CH 20V 15A 8SO

Infineon Technologies
2,277 -

RFQ

IRF7425TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ084N08NS5ATMA1

BSZ084N08NS5ATMA1

MOSFET N-CH 80V 40A TSDSON

Infineon Technologies
2,610 -

RFQ

BSZ084N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 8.4mOhm @ 20A, 10V 3.8V @ 31µA 25 nC @ 10 V ±20V 1820 pF @ 40 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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