Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7204PBF

IRF7204PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
2,970 -

RFQ

IRF7204PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 4.5V, 10V 60mOhm @ 5.3A, 10V 2.5V @ 250µA 25 nC @ 10 V ±12V 860 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7205PBF

IRF7205PBF

MOSFET P-CH 30V 4.6A 8SO

Infineon Technologies
2,199 -

RFQ

IRF7205PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 70mOhm @ 4.6A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 870 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7207PBF

IRF7207PBF

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies
2,087 -

RFQ

IRF7207PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tc) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7233PBF

IRF7233PBF

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies
3,835 -

RFQ

IRF7233PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7241PBF

IRF7241PBF

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies
2,917 -

RFQ

IRF7241PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR2705PBF

IRLR2705PBF

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
3,081 -

RFQ

IRLR2705PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905PBF

IRLR2905PBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,652 -

RFQ

IRLR2905PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3103PBF

IRLR3103PBF

MOSFET N-CH 30V 55A DPAK

Infineon Technologies
2,017 -

RFQ

IRLR3103PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3103TRLPBF

IRLR3103TRLPBF

MOSFET N-CH 30V 55A DPAK

Infineon Technologies
2,131 -

RFQ

IRLR3103TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUXHMF7321D2

AUXHMF7321D2

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies
2,603 -

RFQ

AUXHMF7321D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V 1V @ 250µA 34 nC @ 10 V ±20V 710 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1PBF

IRF7322D1PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
2,622 -

RFQ

IRF7322D1PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7324D1PBF

IRF7324D1PBF

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies
3,301 -

RFQ

IRF7324D1PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7353D1PBF

IRF7353D1PBF

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,641 -

RFQ

IRF7353D1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7353D2PBF

IRF7353D2PBF

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
3,299 -

RFQ

IRF7353D2PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 29mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7401PBF

IRF7401PBF

MOSFET N-CH 20V 8.7A 8SO

Infineon Technologies
2,573 -

RFQ

IRF7401PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 8.7A (Ta) 2.7V, 4.5V 22mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 48 nC @ 4.5 V ±12V 1600 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7402PBF

IRF7402PBF

MOSFET N-CH 20V 6.8A 8SO

Infineon Technologies
2,968 -

RFQ

IRF7402PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 2.7V, 4.5V 35mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7403PBF

IRF7403PBF

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies
3,121 -

RFQ

IRF7403PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7404PBF

IRF7404PBF

MOSFET P-CH 20V 6.7A 8SO

Infineon Technologies
2,701 -

RFQ

IRF7404PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 20 V 6.7A (Ta) 2.7V, 4.5V 40mOhm @ 3.2A, 4.5V 700mV @ 250µA (Min) 50 nC @ 4.5 V ±12V 1500 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7406PBF

IRF7406PBF

MOSFET P-CH 30V 5.8A 8SO

Infineon Technologies
2,143 -

RFQ

IRF7406PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7413PBF

IRF7413PBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
2,613 -

RFQ

IRF7413PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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