Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7413ZPBF

IRF7413ZPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
2,633 -

RFQ

IRF7413ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7420PBF

IRF7420PBF

MOSFET P-CH 12V 11.5A 8SO

Infineon Technologies
3,328 -

RFQ

IRF7420PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7421D1PBF

IRF7421D1PBF

MOSFET N-CH 30V 5.8A 8SO

Infineon Technologies
2,738 -

RFQ

IRF7421D1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 35mOhm @ 4.1A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 510 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7422D2PBF

IRF7422D2PBF

MOSFET P-CH 20V 4.3A 8SO

Infineon Technologies
3,709 -

RFQ

IRF7422D2PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.7V, 4.5V 90mOhm @ 2.2A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 610 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7424PBF

IRF7424PBF

MOSFET P-CH 30V 11A 8SO

Infineon Technologies
2,332 -

RFQ

IRF7424PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7433PBF

IRF7433PBF

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies
2,532 -

RFQ

IRF7433PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V 900mV @ 250µA 20 nC @ 4.5 V ±8V 1877 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7450PBF

IRF7450PBF

MOSFET N-CH 200V 2.5A 8SO

Infineon Technologies
3,662 -

RFQ

IRF7450PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7451PBF

IRF7451PBF

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
2,717 -

RFQ

IRF7451PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) - Surface Mount
IRF7452PBF

IRF7452PBF

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies
2,599 -

RFQ

IRF7452PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 10V 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7453PBF

IRF7453PBF

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies
2,843 -

RFQ

IRF7453PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7455PBF

IRF7455PBF

MOSFET N-CH 30V 15A 8SO

Infineon Technologies
2,417 -

RFQ

IRF7455PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.8V, 10V 7.5mOhm @ 15A, 10V 2V @ 250µA 56 nC @ 5 V ±12V 3480 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7456PBF

IRF7456PBF

MOSFET N-CH 20V 16A 8SO

Infineon Technologies
3,555 -

RFQ

IRF7456PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 62 nC @ 5 V ±12V 3640 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPC100N04S5L1R9ATMA1

IPC100N04S5L1R9ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies
3,536 -

RFQ

IPC100N04S5L1R9ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 50µA 81 nC @ 10 V ±16V 4310 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC160N10NS3GATMA1

BSC160N10NS3GATMA1

MOSFET N-CH 100V 8.8A/42A TDSON

Infineon Technologies
3,793 -

RFQ

BSC160N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 8.8A (Ta), 42A (Tc) 6V, 10V 16mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1700 pF @ 50 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1

MOSFET N-CH 150V 13A 8TSDSON

Infineon Technologies
3,671 -

RFQ

BSZ900N15NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 8V, 10V 90mOhm @ 10A, 10V 4V @ 20µA 7 nC @ 10 V ±20V 510 pF @ 75 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD95R2K0P7ATMA1

IPD95R2K0P7ATMA1

MOSFET N-CH 950V 4A TO252-3

Infineon Technologies
2,977 -

RFQ

IPD95R2K0P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 2Ohm @ 1.7A, 10V 3.5V @ 80µA 10 nC @ 10 V ±20V 330 pF @ 400 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ034N04LSATMA1

BSZ034N04LSATMA1

MOSFET N-CH 40V 19A/40A TSDSON

Infineon Technologies
2,432 -

RFQ

BSZ034N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 40A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 2.1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7853TRPBF

IRF7853TRPBF

MOSFET N-CH 100V 8.3A 8SO

Infineon Technologies
2,542 -

RFQ

IRF7853TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta) 10V 18mOhm @ 8.3A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1640 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR6215TRPBF

IRFR6215TRPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,439 -

RFQ

IRFR6215TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD18P06PGBTMA1

SPD18P06PGBTMA1

MOSFET P-CH 60V 18.6A TO252-3

Infineon Technologies
2,957 -

RFQ

SPD18P06PGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 18.6A (Tc) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 33 nC @ 10 V ±20V 860 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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