Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD068P03L3GATMA1

IPD068P03L3GATMA1

MOSFET P-CH 30V 70A TO252-3

Infineon Technologies
3,041 -

RFQ

IPD068P03L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 6.8mOhm @ 70A, 10V 2V @ 150µA 91 nC @ 10 V ±20V 7720 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2

MOSFET N-CH 60V 50A TO252-31

Infineon Technologies
3,903 -

RFQ

IPD50N06S4L08ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 7.8mOhm @ 50A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC030N04NSGATMA1

BSC030N04NSGATMA1

MOSFET N-CH 40V 23A/100A TDSON

Infineon Technologies
2,393 -

RFQ

BSC030N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 100A (Tc) 10V 3mOhm @ 50A, 10V 4V @ 49µA 61 nC @ 10 V ±20V 4900 pF @ 20 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF60R217

IRF60R217

MOSFET N-CH 60V 58A DPAK

Infineon Technologies
3,750 -

RFQ

IRF60R217

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 6V, 10V 9.9mOhm @ 35A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8743TRPBF

IRLR8743TRPBF

MOSFET N-CH 30V 160A DPAK

Infineon Technologies
2,223 -

RFQ

IRLR8743TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC252N10NSFGATMA1

BSC252N10NSFGATMA1

MOSFET N-CH 100V 7.2A/40A TDSON

Infineon Technologies
2,878 -

RFQ

BSC252N10NSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Ta), 40A (Tc) 10V 25.2mOhm @ 20A, 10V 4V @ 43µA 17 nC @ 10 V ±20V 1100 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3705ZSTRL

IRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,989 -

RFQ

IRL3705ZSTRL

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - - - Surface Mount
IRLR3715ZTRPBF

IRLR3715ZTRPBF

MOSFET N-CH 20V 49A DPAK

Infineon Technologies
2,343 -

RFQ

IRLR3715ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 49A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 810 pF @ 10 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7811AVTRPBF

IRF7811AVTRPBF

MOSFET N-CH 30V 10.8A 8SO

Infineon Technologies
3,750 -

RFQ

IRF7811AVTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.8A (Ta) 4.5V 14mOhm @ 15A, 4.5V 3V @ 250µA 26 nC @ 5 V ±20V 1801 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811WTRPBF

IRF7811WTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,721 -

RFQ

IRF7811WTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V 1V @ 250µA 33 nC @ 5 V ±12V 2335 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9410TRPBF

IRF9410TRPBF

MOSFET N-CH 30V 7A 8SO

Infineon Technologies
3,356 -

RFQ

IRF9410TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3704TRPBF

IRFR3704TRPBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
3,617 -

RFQ

IRFR3704TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7807VTRPBF

IRF7807VTRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,017 -

RFQ

IRF7807VTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VD1TRPBF

IRF7807VD1TRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,234 -

RFQ

IRF7807VD1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807TRPBF

IRF7807TRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,120 -

RFQ

IRF7807TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1TRPBF

IRF7322D1TRPBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
2,896 -

RFQ

IRF7322D1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711TRPBF

IRFR3711TRPBF

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
3,000 -

RFQ

IRFR3711TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7811ATRPBF

IRF7811ATRPBF

MOSFET N-CH 28V 11A 8SO

Infineon Technologies
2,119 -

RFQ

IRF7811ATRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 11A (Ta) 4.5V 10mOhm @ 11A, 10V 3V @ 250µA 26 nC @ 4.5 V ±12V 1760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR3714TRPBF

IRLR3714TRPBF

MOSFET N-CH 20V 36A DPAK

Infineon Technologies
3,907 -

RFQ

IRLR3714TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7464TRPBF

IRF7464TRPBF

MOSFET N-CH 200V 1.2A 8SO

Infineon Technologies
3,179 -

RFQ

IRF7464TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1.2A (Ta) 10V 730mOhm @ 720mA, 10V 5.5V @ 250µA 14 nC @ 10 V ±30V 280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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