Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7805TRPBF

IRF7805TRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,820 -

RFQ

IRF7805TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7452TRPBF

IRF7452TRPBF

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies
3,087 -

RFQ

IRF7452TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 10V 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL3303TRPBF

IRLL3303TRPBF

MOSFET N-CH 30V 4.6A SOT223

Infineon Technologies
3,975 -

RFQ

IRLL3303TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR8103VTRPBF

IRLR8103VTRPBF

MOSFET N-CH 30V 91A DPAK

Infineon Technologies
2,615 -

RFQ

IRLR8103VTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 91A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2672 pF @ 16 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7413TRPBF

IRF7413TRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,150 -

RFQ

IRF7413TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7220TRPBF

IRF7220TRPBF

MOSFET P-CH 14V 11A 8SO

Infineon Technologies
3,903 -

RFQ

IRF7220TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP064VPBF

IRFP064VPBF

MOSFET N-CH 60V 130A TO247AC

Infineon Technologies
2,067 -

RFQ

IRFP064VPBF

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 10V 5.5mOhm @ 78A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6760 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715ZSPBF

IRL3715ZSPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
2,761 -

RFQ

IRL3715ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZLPBF

IRL3715ZLPBF

MOSFET N-CH 20V 50A TO262

Infineon Technologies
3,021 -

RFQ

IRL3715ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715ZPBF

IRL3715ZPBF

MOSFET N-CH 20V 50A TO220AB

Infineon Technologies
2,822 -

RFQ

IRL3715ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR120NTRPBF

IRLR120NTRPBF

MOSFET N-CH 100V 10A DPAK

Infineon Technologies
2,201 -

RFQ

IRLR120NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0506NSATMA1

BSZ0506NSATMA1

MOSFET N-CH 30V 15A/40A TSDSON

Infineon Technologies
3,969 -

RFQ

BSZ0506NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 40A (Tc) 4.5V, 10V 4.4mOhm @ 20A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 950 pF @ 15 V - 2.1W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR2905ZTRPBF

IRLR2905ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,842 -

RFQ

IRLR2905ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0902NSATMA1

BSZ0902NSATMA1

MOSFET N-CH 30V 19A/40A TSDSON

Infineon Technologies
2,915 -

RFQ

BSZ0902NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.1W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0504NSIATMA1

BSC0504NSIATMA1

MOSFET N-CH 30V 21A/72A TDSON

Infineon Technologies
3,269 -

RFQ

BSC0504NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 72A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 960 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSO613SPVGXUMA1

BSO613SPVGXUMA1

MOSFET N/P-CH 8-SOIC

Infineon Technologies
3,651 -

RFQ

BSO613SPVGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 3.44A (Ta) 10V 130mOhm @ 3.44A, 10V 4V @ 1mA 30 nC @ 10 V ±20V 875 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1

Infineon Technologies
2,446 -

RFQ

IAUC100N04S6L020ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.04mOhm @ 50A, 10V 2V @ 32µA 46 nC @ 10 V ±16V 2744 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZCSPBF

IRL3715ZCSPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,047 -

RFQ

IRL3715ZCSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZLPBF

IRL3714ZLPBF

MOSFET N-CH 20V 36A TO262

Infineon Technologies
2,770 -

RFQ

IRL3714ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZLPBF

IRF3711ZLPBF

MOSFET N-CH 20V 92A TO262

Infineon Technologies
2,708 -

RFQ

IRF3711ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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