Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3803SPBF

IRL3803SPBF

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,781 -

RFQ

IRL3803SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBA90N20DPBF

IRFBA90N20DPBF

MOSFET N-CH 200V 98A SUPER-220

Infineon Technologies
2,923 -

RFQ

IRFBA90N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 98A (Tc) 10V 23mOhm @ 59A, 10V 5V @ 250µA 240 nC @ 10 V ±30V 6080 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3715PBF

IRLR3715PBF

MOSFET N-CH 20V 54A DPAK

Infineon Technologies
3,268 -

RFQ

IRLR3715PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3714ZPBF

IRLR3714ZPBF

MOSFET N-CH 20V 37A DPAK

Infineon Technologies
3,574 -

RFQ

IRLR3714ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 37A (Tc) 4.5V, 10V 15mOhm @ 15A, 10V 2.55V @ 250µA 7.1 nC @ 4.5 V ±20V 560 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704ZPBF

IRFR3704ZPBF

MOSFET N-CH 20V 60A DPAK

Infineon Technologies
2,067 -

RFQ

IRFR3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3715PBF

IRLU3715PBF

MOSFET N-CH 20V 54A I-PAK

Infineon Technologies
3,611 -

RFQ

IRLU3715PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU014NPBF

IRLU014NPBF

MOSFET N-CH 55V 10A I-PAK

Infineon Technologies
3,853 -

RFQ

IRLU014NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2703PBF

IRLU2703PBF

MOSFET N-CH 30V 23A IPAK

Infineon Technologies
2,433 -

RFQ

IRLU2703PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4.5V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR014NPBF

IRLR014NPBF

MOSFET N-CH 55V 10A DPAK

Infineon Technologies
2,604 -

RFQ

IRLR014NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3303PBF

IRFU3303PBF

MOSFET N-CH 30V 33A IPAK

Infineon Technologies
3,723 -

RFQ

IRFU3303PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR120ZPBF

IRFR120ZPBF

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,804 -

RFQ

IRFR120ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU024ZPBF

IRLU024ZPBF

MOSFET N-CH 55V 16A I-PAK

Infineon Technologies
2,851 -

RFQ

IRLU024ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU9343PBF

IRLU9343PBF

MOSFET P-CH 55V 20A I-PAK

Infineon Technologies
3,844 -

RFQ

IRLU9343PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V - 660 pF @ 50 V - - - Through Hole
IRFU4105ZPBF

IRFU4105ZPBF

MOSFET N-CH 55V 30A IPAK

Infineon Technologies
2,667 -

RFQ

IRFU4105ZPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR024ZPBF

IRLR024ZPBF

MOSFET N-CH 55V 16A DPAK

Infineon Technologies
3,802 -

RFQ

IRLR024ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU9120NPBF

IRFU9120NPBF

MOSFET P-CH 100V 6.6A IPAK

Infineon Technologies
3,007 -

RFQ

IRFU9120NPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3708PBF

IRFU3708PBF

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
3,132 -

RFQ

IRFU3708PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3706PBF

IRFU3706PBF

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
2,768 -

RFQ

IRFU3706PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707PBF

IRFU3707PBF

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
2,444 -

RFQ

IRFU3707PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR4343PBF

IRLR4343PBF

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
3,914 -

RFQ

IRLR4343PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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