Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010ZLPBF

IRF1010ZLPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,525 -

RFQ

IRF1010ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34NLPBF

IRF9Z34NLPBF

MOSFET P-CH 55V 19A TO262

Infineon Technologies
2,879 -

RFQ

IRF9Z34NLPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34NSPBF

IRF9Z34NSPBF

MOSFET P-CH 55V 19A D2PAK

Infineon Technologies
3,821 -

RFQ

IRF9Z34NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI540NPBF

IRLI540NPBF

MOSFET N-CH 100V 23A TO220AB FP

Infineon Technologies
2,869 -

RFQ

IRLI540NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48VSPBF

IRFZ48VSPBF

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies
2,114 -

RFQ

IRFZ48VSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) - 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V - 1985 pF @ 25 V - - - Surface Mount
BSZ099N06LS5ATMA1

BSZ099N06LS5ATMA1

MOSFET N-CH 60V 46A TSDSON

Infineon Technologies
3,328 -

RFQ

BSZ099N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 4.5V, 10V 9.9mOhm @ 20A, 10V 2.3V @ 14µA 3.1 nC @ 4.5 V ±20V 1300 pF @ 30 V Standard 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

Infineon Technologies
3,947 -

RFQ

IAUC80N04S6N036ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 7V, 10V 3.68mOhm @ 40A, 10V 3V @ 18µA 22 nC @ 10 V ±20V 1338 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC050N03LSGATMA1

BSC050N03LSGATMA1

MOSFET N-CH 30V 18A/80A TDSON

Infineon Technologies
3,687 -

RFQ

BSC050N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 80A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR9343TRPBF

IRLR9343TRPBF

MOSFET P-CH 55V 20A DPAK

Infineon Technologies
149 -

RFQ

IRLR9343TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
BSP171PH6327XTSA1

BSP171PH6327XTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,117 -

RFQ

BSP171PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 300mOhm @ 1.9A, 10V 2V @ 460µA 20 nC @ 10 V ±20V 460 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP316PH6327XTSA1

BSP316PH6327XTSA1

MOSFET P-CH 100V 680MA SOT223-4

Infineon Technologies
3,523 -

RFQ

BSP316PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 680mA (Ta) 4.5V, 10V 1.8Ohm @ 680mA, 10V 2V @ 170µA 6.4 nC @ 10 V ±20V 146 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC050N04LSGATMA1

BSC050N04LSGATMA1

MOSFET N-CH 40V 18A/85A TDSON

Infineon Technologies
3,297 -

RFQ

BSC050N04LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 85A (Tc) 4.5V, 10V 5mOhm @ 50A, 10V 2V @ 27µA 47 nC @ 10 V ±20V 3700 pF @ 20 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ48VPBF

IRFZ48VPBF

MOSFET N-CH 60V 72A TO220AB

Infineon Technologies
3,740 -

RFQ

IRFZ48VPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540NSPBF

IRF540NSPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
2,358 -

RFQ

IRF540NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540NSPBF

IRL540NSPBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
2,570 -

RFQ

IRL540NSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010EZSPBF

IRF1010EZSPBF

MOSFET N-CH 60V 75A D2PAK

Infineon Technologies
3,775 -

RFQ

IRF1010EZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203NPBF

IRL2203NPBF

MOSFET N-CH 30V 116A TO220AB

Infineon Technologies
3,167 -

RFQ

IRL2203NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540NLPBF

IRL540NLPBF

MOSFET N-CH 100V 36A TO262

Infineon Technologies
2,507 -

RFQ

IRL540NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46NSPBF

IRFZ46NSPBF

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies
3,036 -

RFQ

IRFZ46NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) - Surface Mount
IRF640NSPBF

IRF640NSPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies
3,178 -

RFQ

IRF640NSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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