Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2807ZLPBF

IRF2807ZLPBF

MOSFET N-CH 75V 75A TO262

Infineon Technologies
3,068 -

RFQ

IRF2807ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3303SPBF

IRL3303SPBF

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
2,576 -

RFQ

IRL3303SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3305PBF

IRF3305PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,680 -

RFQ

IRF3305PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS17N20DPBF

IRFS17N20DPBF

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies
2,668 -

RFQ

IRFS17N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4215PBF

IRFB4215PBF

MOSFET N-CH 60V 115A TO220AB

Infineon Technologies
2,303 -

RFQ

IRFB4215PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115A (Tc) 10V 9mOhm @ 54A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4080 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZLPBF

IRF3707ZLPBF

MOSFET N-CH 30V 59A TO262

Infineon Technologies
3,508 -

RFQ

IRF3707ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZCLPBF

IRF3711ZCLPBF

MOSFET N-CH 20V 92A TO262

Infineon Technologies
2,632 -

RFQ

IRF3711ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113LPBF

IRL8113LPBF

MOSFET N-CH 30V 105A TO262

Infineon Technologies
2,638 -

RFQ

IRL8113LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZLPBF

IRFZ46ZLPBF

MOSFET N-CH 55V 51A TO262

Infineon Technologies
3,293 -

RFQ

IRFZ46ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3315SPBF

IRF3315SPBF

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
2,550 -

RFQ

IRF3315SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315LPBF

IRF3315LPBF

MOSFET N-CH 150V 21A TO262

Infineon Technologies
2,870 -

RFQ

IRF3315LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB33N15DPBF

IRFB33N15DPBF

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies
2,701 -

RFQ

IRFB33N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS33N15DPBF

IRFS33N15DPBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,893 -

RFQ

IRFS33N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104LPBF

IRF1104LPBF

MOSFET N-CH 40V 100A TO-262

Infineon Technologies
2,365 -

RFQ

IRF1104LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) - 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V - 2900 pF @ 25 V - - - Through Hole
IRL1104SPBF

IRL1104SPBF

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
3,147 -

RFQ

IRL1104SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1104PBF

IRL1104PBF

MOSFET N-CH 40V 104A TO220AB

Infineon Technologies
2,637 -

RFQ

IRL1104PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104LPBF

IRL1104LPBF

MOSFET N-CH 40V 104A TO262

Infineon Technologies
3,744 -

RFQ

IRL1104LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS23N20DPBF

IRFS23N20DPBF

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies
2,812 -

RFQ

IRFS23N20DPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3502PBF

IRL3502PBF

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
2,825 -

RFQ

IRL3502PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC90N04S5L3R3ATMA1

IPC90N04S5L3R3ATMA1

MOSFET N-CH 40V 90A 8TDSON-34

Infineon Technologies
2,582 -

RFQ

IPC90N04S5L3R3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 3.3mOhm @ 45A, 10V 2V @ 23µA 40 nC @ 10 V ±16V 2145 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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